Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T01:40:57.414Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Morphology and Lattice Misfit in Yig and La: Yig Films Grown by Lpe Method on GGG Substrate

Published online by Cambridge University Press:  10 February 2011

Duk-yong Choi  and
Su-jin Chung
Duk-yong Choi
Affiliation:
Dept. of Inorg. Mat'ls Eng., Seoul National Univ., Seoul 152–742, Korea
Su-jin Chung
Affiliation:
Dept. of Inorg. Mat'ls Eng., Seoul National Univ., Seoul 152–742, Korea
Get access

Abstract

Y3Fe5O12(YIG) and La-doped YIG films were grown on the {111} GGG substrate using the PbO-B2O3 flux system. Pb, La incorporation and lattice misfit and annealing behaviors were studied. In the case of LPE growth of YIG film, lead ions from flux are substituted inevitably, and they play an important role in controlling film misfit. For a complete lattice matching, high supercooling is necessary in pure YIG growth, but this induces high defect concentration. In this experiment, La ions were added in the solution to sufficiently increase lattice parameter of the film grown under low supercooling. The concentration of substituted Pb and La were increased as the growth temperature was lowered and growth rate increased. The effective distribution coefficient of La was about 0.2 at a supercooling of 30 °C. The optimum growth conditions which bring about very small misfit were determined by measuring the misfit by double crystal diffractometer. Strain distributions of pre-annealed and annealed samples were investigated by triple crystal diffractometer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 494: Symposium V – Science & Technology of Magnetic Oxides , 1997 , 125
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Glass, Howard L., Proc. of the IEEE 76 (2), p. 151 (1988).Google Scholar
2. Hergt, R., Pfeiffer, H., Görnert, P., Wendt, M., Keszei, B. and Vandlik, J., Phys. Stat. Sol. (a) 104, p. 769 (1987).Google Scholar
3. Görnert, P., Hergt, R., Sinn, E., Wendt, M., Keszei, B. and Vandlik, J., J. Crystal Growth 87, p. 331 (1988).Google Scholar
4. Glass, H. L. and Elliott, M. T., J. Crystal Growth 27, p. 253 (1974).Google Scholar
5. Isomae, S., Kishino, S. and Takahashi, M., J. Crystal Growth 23, p. 253 (1974).Google Scholar
6. Krost, Alois, Bauer, Günther and Woitok, Joachim, in Optical Characterization of Epitaxial Semiconductor Lavers, edited by Richter, Wolfgang and Bauer, Günther(Springer-Verlag, Berlin Heidelberg, 1996), p. 287–421.Google Scholar
7. Röschmann, P. and Torksdorf, W., Mat. Res. Bull. 18, p. 449 (1983).Google Scholar
8. Plaskett, T. S., Klokholm, E. and Cronemeyer, D. C, AIP Conf. Proc. 29, p. 109 (1975).Google Scholar
9. Scott, G. B. and Page, J. L., J. Appl. Phys. 48 (3), p. 1342 (1977).Google Scholar