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Surface Modifications of CMR Manganite Thin Films Using Atomic Force Microscope

Published online by Cambridge University Press:  01 February 2011

David Matthew Schaefer
Affiliation:
[email protected], Towson University, Physics, Astronomy and Geosciences, 8000 York Road, Towson, Maryland, 21252, United States
Matthew Sneider
Affiliation:
[email protected], Towson University, Physics, Astronomy and Geosciences, 8000 York Road, Towson, Maryland, 21252, United States
Cameron Bolling
Affiliation:
[email protected], Towson University, Physics, Astronomy and Geosciences, 8000 York Road, Towson, Maryland, 21252, United States
John Sunderland
Affiliation:
[email protected], Towson University, Physics, Astronomy and Geosciences, 8000 York Road, Towson, Maryland, 21252, United States
Anthony L. Davidson III
Affiliation:
[email protected], Towson University, Physics, Astronomy and Geosciences, 8000 York Road, Towson, Maryland, 21252, United States
Rajeswari M. Kolagani
Affiliation:
[email protected], Towson University, Physics, Astronomy and Geosciences, 8000 York Road, Towson, Maryland, 21252, United States
Tyler Bradley
Affiliation:
[email protected], Towson High School, Towson, Maryland, 21252, United States
Bonnie Ludka
Affiliation:
[email protected], James Madison University, Harrisonburg, Virginia, 22807, United States
Kyle Hall
Affiliation:
[email protected], Towson University, Physics, Astronomy and Geosciences, 8000 York Road, Towson, Maryland, 21252, United States
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Abstract

Reproducible nanoscale surface lithography have been produced on La00.66Ba0.33MnO3 thin films using Atomic Force Microscopy. Using an anodic oxidation technique, structures were produced using both positive tip bias voltages as well as negative tip voltages. The electric field produced by applying a positive tip bias acts to reduce the region near the surface, whereas negative tip bias causes an oxidation reaction. Using a positive tip bias, stable structures were consistently achieved which demonstrated a linear dependence of height and width on tip voltage and writing speed. Heights ranged from 5 – 50 nm and widths from 400 – 2000 nm. Negative bias voltages produced a rapid oxidation of the surface, resulting in uncontrollable writing. After etching with a 50% HCL solution it was found that controlled writing was possible with negative bias voltages.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Dagata, J. A., Inoue, T., Itoh, J., Matsumoto, K., and Yokoyama, H., J. Appl. Phys. 84, 6891, (1998).Google Scholar
[2] Chien, F. S., Chou, Y.-C., Chen, T. T., Hsieh, W.-F., Chao, T. S., and Gwo, S., Appl. Phys. Lett. 89, 2465, (2001).Google Scholar
[3] Okada, Y., Luchi, Y., Kawabe, M., and Harris, J. S., J. Appl. Phys., 88, 1136, (2000).Google Scholar
[4] Dubois, E. and Bubendorff, J.-L., J. Appl. Phys., 87, 8148, (2000).Google Scholar
[5] Shirakashi, J., Matsumoto, K., Miura, N., and Konagai, M., Jpn. J. Appl. Phys. Part 2 36, L1257, (1997).Google Scholar
[6] Snow, E., Cambell, P. M., and Perkins, F. K., Proc. IEEE 85, 601, (1997).Google Scholar
[7] Avramescu, A., Ueta, A., Uesugi, K., and Suemune, I., J. Appl. Phys. 88, 3158, (2000).Google Scholar
[8] Li, R., Kanki, T., Tohyama, H., Hirooka, M., Tanaka, H., Kawai, T., Nanotechnology, 16, 28, (2005).Google Scholar
[9] Dubois, E., Bubbendorff, J., Solid State Electronics, 43, 10851089, (1999).Google Scholar
[10] Tello, M., Garcia, R., Appl. Phys. Lett. Vol 79, 3, (2001).Google Scholar
[11] Jungblut, H., Willie, D., Lewerenz, H. J., Appl. Phys. Lett., 78, 2, (2001).Google Scholar