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Surface Modification of Sic by Ion Implantation

Published online by Cambridge University Press:  28 February 2011

Susan Wood ,
J. A. Spitznagel ,
W. J. Choyke ,
J. Bradshaw ,
J. Greggi Jr.  and
N. J. Doyle
Susan Wood
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
J. A. Spitznagel
Affiliation:
Westinghouse R&D Center and University of Pittsburgh
W. J. Choyke
Affiliation:
Westinghouse R&D Center and University of Pittsburgh
J. Bradshaw
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
J. Greggi Jr.
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
N. J. Doyle
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
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Abstract

Predominantly 6H <0001> SiC single crystals have been implanted with nitrogen and aluminum at 300°K. The effects of implantation and post-implantation annealing at 573–1173°K have been characterized by Rutherford backscattering/channeling, microhardness measurements and transmission electron microscopy. Even at 1173°K, defect annealing was inhibited in amorphized regions. Progressive damage recovery as the anneal temperature was increased was otherwise generally observed. Fluences predicted by the critical damage energy of 2 × 1021 keV/cm3 did not quite produce amorphization to x = 0. In the as-implanted specimens, decreasing hardness was observed with increasing fluence. Significant surface softening (∼ 33% hardness reduction) was achieved at the highest aluminum fluence (5 × 1015 Al/cm2) and was stable at temperatures < 893°K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 459
Copyright
Copyright © Materials Research Society 1986

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References

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