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Surface Cross-Hatched Morphology on Strained III-V Semiconductor Heterostructures

Published online by Cambridge University Press:  28 February 2011

Kevin H. Chang ,
Ronald Gibala ,
David J. Srolovitz ,
Pallab K. Bhattacharya  and
John F. Mansfield
Kevin H. Chang
Affiliation:
Present address: Motorola Inc., Phoenix, AZ 85062-2953
Ronald Gibala
Affiliation:
Departments of Materials Science and Engineering and Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
David J. Srolovitz
Affiliation:
Departments of Materials Science and Engineering and Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
Pallab K. Bhattacharya
Affiliation:
Departments of Materials Science and Engineering and Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
John F. Mansfield
Affiliation:
Departments of Materials Science and Engineering and Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
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Abstract

The correlation between surface cross-hatched morphology and interfacial misfit dislocations in strained III-V semiconductor heteroepitaxy has been studied. The surface pattern is clearly seen on samples grown at high temperature (520°C) and with lattice mismatch f < 2%. A poorly defined cross-hatched morphology is found on layers grown at low temperature (400°C). For f > 2%, a rough textured surface morphology is observed in place of cross hatching. Few threading dislocations are observed in the strained layer when cross hatch develops. Cross hatch occurs after most interfacial misfit dislocations are generated. The results suggest that surface cross hatch is directly related to the generation and glide of interfacial misfit dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 129
Copyright
Copyright © Materials Research Society 1990

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