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Surface Core-Level Photoelectron Diffraction of Surface Reconstructions

Published online by Cambridge University Press:  15 February 2011

Eli Rotenberg
Affiliation:
Department of Physics, University of Oregon, Eugene OR 94703
J. D. Denlinger
Affiliation:
Department of Physics, University of Wisconsin, Milwaukee WI 53211
S. D. Kevan
Affiliation:
Department of Physics, University of Oregon, Eugene OR 94703
B. P. Tonner
Affiliation:
Department of Physics, University of Wisconsin, Milwaukee WI 53211
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Abstract

Experimental surface core-level shifts (SCLSs) aid in understanding the roles of altered electronic and screening properties at reconstructed semiconductor surfaces.1 Because of unresolved theoretical issues, the assignment of SCLSs has often remained controversial even though the surface geometry has been completely determined with traditional probes.

Angular- and energy-dependent x-ray photoelectron diffraction (XPD) of each chemically resolved surface core-level electron can be used to discriminate the structure around each chemically shifted species. However, this technique requires tunability, high energy resolution to separate the SCLSs from the bulk core-levels, and high photon flux in order to gather large amounts of data in a reasonable time. Using the newly commissioned spectromicroscopy beamline 7.0 at the Advanced Light Source, we have acquired chemically-resolved XPD data for Si(111) 7×7 for several photon energies, and by examination of forward-focusing peaks we can draw tentative conclusions about the atomic origins of each core-level shifted peak.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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