Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:37:08.595Z Has data issue: false hasContentIssue false
  • English
  • Français

The Surface Chemistry of Triallylamine on Si(111) and its Coadsorption with Triethylgallium

Published online by Cambridge University Press:  21 February 2011

Dirk Freundt ,
Georg Landmesser ,
Angela Rizzi  and
Hans Lüth
Dirk Freundt
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, 52425 JÜLICH, Germany
Georg Landmesser
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, 52425 JÜLICH, Germany
Angela Rizzi
Affiliation:
Dipartimento di Fisica, Università di Modena, via Campi 213/A, 41100 MODENA, Italy, [email protected]
Hans Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, 52425 JÜLICH, Germany
Get access

Abstract

The surface chemistry of Triallylamine (TAA), (C3H5)3N on Si(111) has been studied by adsorption under UHV conditions and in-situ characterization. High Resolution Electron Energy Loss Spectroscopy (HREELS) yields the spectrum of vibration modes at the surface, and X-ray Photoelectron Spectroscopy (XPS) yields the chemical bonding and the partial concentration of the different adsorbates in the near surface region. The tertiary amine TAA physisorbs at RT without dissociation. Successive annealing steps of the physisorbed phase induce the dissociation of the amine at 400 °C. At higher temperatures the allyl groups are partially desorbed and the rest fully dissociated at 600 °C, where the hydrogen leaves the surface and the nitrogen and carbon start to diffuse into the Si substrate. A very similar behaviour is observed for the adsorption of TAA on a heated Si substrate. The coadsorption with Triethylgallium (TEG) in the temperature range 500–800 °C does not induce significant changes in the reaction at the Si surface. A negligible quantity of Ga is detected at the surface after codeposition in the whole investigated temperature range. The growth of a GaN phase has not been observed, neither on Si(111) nor on Al2O3(0001) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 91
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Taudt, W., Wachtendorf, B., Sauerländer, F., Lampe, S., Hamadeh, H., Heuken, H., DPG Berlin (1995)Google Scholar
2 Rizzi, A., Rösen, B.N.E., Freundt, D., Dieker, Ch., Gerthsen, D. and Lüth, H., Phys. Rev. B 51, 17780 (1995)Google Scholar
3 Pachler, K.G.R., Matlok, F., Gremlich, H.U., Merk FT-IR Atlas (VCH GmbH, Weinheim, 1988), p .733 Google Scholar
4 Kärcher, R., Ley, L., Johnson, R.L., Phys. Rev. B 30, 1896 (1984)Google Scholar
5 Fang, R.C. and Ley, L., Phys. Rev. B 40, 3818 (1989)Google Scholar
6 Hirayama, H., Sasaoka, C., Tasumi, T., Ohshita, Y., Appl. Phys. Lett. 54, 126 (1988)Google Scholar
7 Abernathy, C.R., in Handbook of Thin Film Process Technology. Eds. Glocker, D.A., Ismat Shah, S., A2.1 (IOP Publishing Ltd, 1995)Google Scholar
8 Powell, R.C., Lee, N.-E., Greene, J.E., Appl. Phys. Lett. 60, 2505 (1992)Google Scholar
9 Abernathy, C.R., J. Vac. Sci. Technol. A 11, 869 (1993)Google Scholar