Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:32:54.670Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Chemistry and Mechanism of Atomic Layer Growth of GaAs

Published online by Cambridge University Press:  16 February 2011

Ming L. Yu ,
Nicholas I. Buchan ,
Ryutaro Souda  and
Thomas F. Kuech
Ming L. Yu
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Nicholas I. Buchan
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Ryutaro Souda
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Thomas F. Kuech
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

The success In attaining atomic layer epitaxy (ALE) of GaAs depends critically on the choice of the Ga precursor. Three systems were examined: trimethylgallium (TMGa) and diethylgallium chloride (DEGaCI) both of which give ALE, and triethylgallium (TEGa) which does not. We compared the surface reactions of these compounds on GaAs(100) and concluded that there was no evidence for reaction selectivity between Ga and As sites to cause ALE. Site blocking by the ligands on the Ga precursors alone also could not provide a self-limiting Ga deposition for ALE. We found evidence of a new mechanism by which self-limiting deposition of Ga resulted when the incoming Ga flux by the adsorption of Ga precursors was counter-balanced by an outgoing flux of Ga containing reaction product. For TMGa and DEGaCI with which ALE is successful, the products are CH3Ga and GaCl, respectively. For TEGa, the corresponding compound C2H5Ga was not formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 3
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nishizawa, J. and Kurabayasahi, T., J. Cryst. Growth 93, 98 (1988).Google Scholar
2. Tischler, M. A. and Bedair, S. M., J. Cryst. Growth 77, 89 (1986).Google Scholar
3. Watanabe, A., Kamijoh, T., Hata, M., Isu, T., and Katayama, Y., Vacuum 41, 965 (1990).Google Scholar
4. Denbaars, S. P., Dapkus, P. D., Beyler, C. A., Hariz, A. and Dzurko, K. M., J. Cryst. Growth 93, 195 (1988).CrossRefGoogle Scholar
5. Nishizawa, J., Kurabayashi, T., Abe, H., and Sakurai, N., J. Electrochem. Soc. 134, 945 (1987).CrossRefGoogle Scholar
6. Sakuma, Y., Ozeki, M., Ohtsuka, N., and Kodoma, K., J. Appl. Phys. 68, 5660 (1990).Google Scholar
7. A small processing window for ALE has been reported by Ohno, H., Ohtsuka, S., Ishil, H., Matsubara, Y., and Hasegawa, H., Appl. Phys. Lett. 54, 2000 (1989).Google Scholar
8. Mori, K., Yoshida, M., Usui, A., and Terao, H., Appl. Phys. Lett. 52, 27 (1988).Google Scholar
9. Sasaoka, C., Yoshida, M., and Usui, A., Jap. J. Appl. Phys. 27, L490 (1988).Google Scholar
10. Creighton, J. R., Lykke, K. R., Shamanian, V. A., and Kay, B. D., Appl. Phys. Lett. 57, 279 (1990).Google Scholar
11. Creighton, J. R., Surf. Sci. 234, 287 (1990).CrossRefGoogle Scholar
12. Yu, M. L., Memmert, U., and Kuech, T. F., Appl. Phys. Lett. 55, 1011 (1989).CrossRefGoogle Scholar
13. Memmert, U. and Yu, M. L., Appl. Phys. Lett. 567, 1883 (1990).Google Scholar
14. Murrell, A. J., Wee, A. T. S., Fairbrother, D. H., Singh, N. K., Foord, J. S., Davies, G. J., and Andrews, D. A., J. Appl. Phys. 68, 4053 (1990).CrossRefGoogle Scholar
15. Donnelly, V. M. and McCaulley, J. A., Surf. Sci. 238, 34 (1990).Google Scholar
16. Yu, M. L., Memmert, U., Buchan, N. I., and Kuech, T. F. in Chemical Perspectives of Microelectronic Materials II, edited by Interrante, L. V., Jensen, K. F., Dubois, L. H., and Gross, M. E., (Mater. Res. Soc. Proc. 204, Pittsburgh, PA 1991) pp. 37–46.Google Scholar
17. Närmann, A., Purtell, R., and Yu, M. L., Proceedings of this Symposium (to be published).Google Scholar
18. King, D. A. and Wells, M. G., Surf. Sci. 29, 454 (1972).Google Scholar
19. Ohno, H., Ohtsuka, S., Ishii, H., Matsubara, Y., and Hasegawa, H., Appl. Phys. Lett. 54, 2000 (1989), reported that they were able to deposit a monolayer of Ga with DEGaCI at 300° C at a pressure of 1 × 10−5 torr but without the presence of Cl on the surface. However we failed to reproduce the result.Google Scholar