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Surface Chemical Routes to Low Contamination Beam Assisted GaAs Etching

Published online by Cambridge University Press:  25 February 2011

Duncan Marshall  and
Richard B. Jackman
Duncan Marshall
Affiliation:
Electronic Electrical Engineering, University College London, Torrington Place, WC1E 7JE
Richard B. Jackman
Affiliation:
Electronic Electrical Engineering, University College London, Torrington Place, WC1E 7JE
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Abstract

In-situ processing requires totally dry approaches to pattern generation to be developed. Of particular interest are beam driven reactions that can be localised without prior masking. This paper considers the adsorption - desorption characteristics of chlorine, dichloroethane and sulphuryl chloride on GaAs(lOO). The surface reactivity in these systems is seen to vary considerably. The implications of this are considered with regard to their use as chemically assisted ion beam and laser photochemical etching gases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 587
Copyright
Copyright © Materials Research Society 1993

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