Hostname: page-component-6bf8c574d5-qdpjg Total loading time: 0 Render date: 2025-02-20T14:39:08.454Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Characterization of Cu(In, Ga)Se2 Thin Films Treated by Various Solutions

Published online by Cambridge University Press:  10 February 2011

T. Wada ,
Y. Hashimoto ,
K. Kusao ,
N. Kohara ,
T. Negami  and
M. Nishitani
T. Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
Y. Hashimoto
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
K. Kusao
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
N. Kohara
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
T. Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
M. Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
Get access

Abstract

Cu-rich Cu(In, Ga)Se2 (CIGS) films were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive x-ray fluorescence spectroscopy (EDX) and x-ray photoelectron spectroscopy (XPS). The Cu-rich CIGS film were treated in KCN and NH3 solutions. In the as-deposited Cu-rich CIGS film, the cation ratio of Cu/(In+Ga) at the surface exceeded the bulk value. Cross-sectional TEM of the KCN-treated film suggested that Cu2-xSe existed both at the grain boundaries and on the grains near the surface of the Cu-rich CIGS film. The Cu2-xSe was completely removed by the treatment in the KCN solution and was removed only at the front surface by treatment in the NH3 solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 291
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Rocket, A. and Birkmire, R. W, J. Appl. Phys. 70, R80 (1991).Google Scholar
[2] Contreras, M., Gabor, A.M., Tennant, A.L., Asher, S., Tuttle, J. and Noufi, R.: Progress in Photovoltaics 2 (1994) 287.Google Scholar
[3] Kohara, N., Negami, T., Nishitani, M. and Wada, T.: Jpn. J. Appl. Phys. 34 (1995) Ll 141.Google Scholar
[4] Negami, T., Nishitani, M., Kohara, N., Hashimoto, Y. and Wada, T., Proceeding of this MRS.Google Scholar
[5] Menezes, S., Lewerenz, H.J. and Bachmann, K.J.: Nature 305 (1983) 615.Google Scholar
[6] Bachmann, K.J., Menezes, S., Kotz, R., Fearheiley, M.L. and Lewerenz, H.J.: Surf. Sci. 138 (1984) 475.Google Scholar
[7] Wada, T., Negami, T., Kohara, N., Ikeda, M. and Nishitani, M., Proceeding of 12th European Photovoltaic Solar Energy Conference (Amsterdam) (1992) p. 1542.Google Scholar
[8] Kessler, J., Velthaus, K.O., Ruckh, M., Laichinger, R., Schock, H.W., Lincot, D., Ortega, R. and Vedel, J.: Proceering of 6th International Photovoltaic Science and Engneering Conference (PVSEC-6, India) (1992) p. 1005.Google Scholar
[9] Miyake, H. and Sugiyama, K.: J. Cryst. Growth 125 (1992) 548 Google Scholar