Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T04:16:08.278Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Characteristics Of Quasicrystalline Materials: An Overview Of Work Conducted At Ames Laboratory

Published online by Cambridge University Press:  10 February 2011

C. J. Jenks
C. J. Jenks*
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011 USA
Get access

Abstract

Over the last few years, work in our laboratories in Ames has focussed on elucidating the surface characteristics of Al-based quasicrystalline materials, namely icosahedral (i-) Al-Cu-Fe and i-Al-Pd-Mn. Our work involves the study of the clean surfaces of these materials under ultrahigh vacuum conditions. We find that surfaces cleaned by Ar+ sputtering are depleted in Al relative to the bulk composition. Single grains, after sputtering, undergo a two-stage regrowth process as they are annealed. After heating to about 600 K, a crystalline overlayer is formed. This is rather abruptly replaced at about 750 K by a surface that appears quasicrystalline within the resolution of the experimental techniques used. Calculations based on low-energy electron diffraction (LEED) measurements of this higher temperature state indicate that the Al-rich layers in the bulk model of these materials are the favored surface terminations. Results of low-energy ion scattering (LEIS) corroborate this finding. Consistent with this, we find that the oxidation behavior and general reactivity of these materials are analogous to pure Al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 553: Symposium LL – Quasicrystals , 1998 , 219
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jenks, C. J. and Thiel, P. A., MRS Bulletin 22, 55–58 (1997).Google Scholar
2. Jenks, C. J. and Thiel, P. A., Langmuir 14, 1392–1397 (1998).Google Scholar
3. Thiel, P. A., Goldman, A. I. and Jenks, C. J. In Physical Properties of Quasicrystals; edited by Stadnik, Z. M. (Springer, Heidelberg 1999), in press.Google Scholar
4. Goldman, A. I. and Thiel, P. A. In Quasicrystals: The State of the Art; edited by Steinhardt, P. and DiVincenzo, D. (World Scientific, Singapore 1999), in press.Google Scholar
5. Delaney, D. W., Bloomer, T. E. and Lograsso, T. A. In New Horizons in Quasicrystals: Research and Applications; edited by Goldman, A. I., Sordelet, D. J., Thiel, P. A. and Dubois, J. M. (World Scientific, Ames, IA 1997), pp. 45–52.Google Scholar
6. Shen, Z., Jenks, C. J., Anderegg, J., Delaney, D. W., Lograsso, T. A., Thiel, P. A. and Goldman, A. I., Phys. Rev. Lett. 78, 1050–1053 (1997).Google Scholar
7. Shen, Z., Pinhero, P. J., Lograsso, T. A., Delaney, D. W., Jenks, C. J. and Thiel, P. A., Surf. Sci. 385, L923–L929 (1997).Google Scholar
8. Gierer, M., Hove, M. A. Van, Goldman, A. I., Shen, Z., Chang, S. -L., Jenks, C. J., Zhang, C. -M. and Thiel, P. A., Phys. Rev. Lett. 78, 467–470 (1997).Google Scholar
9. Jenks, C. J., Pinhero, P. J., Shen, Z., Lograsso, T. A., Delaney, D. W., Bloomer, T. E., Chang, S. -L., Zhang, C. -M., Anderegg, J. W., Islam, A. H. M. Z., Goldman, A. I. and Thiel, P. A. In Proceedings of the 6th International Conference on Quasicrystals; edited by Takeuchi, S. and Fujiwara, T. (World Scientific, Tokyo 1998), pp. 741–748.Google Scholar
10. Gierer, M., Hove, M. A. Van, Goldman, A. I., Shen, Z., Chang, S. -L., Pinhero, P. J., Jenks, C. J., Anderegg, J. W., Zhang, C. -M. and Thiel, P. A., Phys. Rev. B 57, 7628–7641 (1998).Google Scholar
11. Zhang, Z., Li, N. C. and Urban, K., J. Mater. Res. 6, 366–370 (1991).Google Scholar
12. Menguy, N., Audier, M. and Guyot, P., Phil. Mag. Lett. 65, 7–14 (1992).Google Scholar
13. Bancel, P. A., Phil. Mag. Lett. 67, 43–49 (1993).Google Scholar
14. Waseda, A., Araki, K., Kimura, K. and Ino, H., J. Non-Cryst. Solids 153/154, 635–639 (1993).Google Scholar
15. Quiquandon, M., Quivy, A., Devaud, J., Faudot, F., Lefebvre, S., Bessière, M. and Calvayrac, Y., J. Phys. Condens. Matter 8, 2487–2512 (1996).Google Scholar
16. Jenks, C. J., Delaney, D. W., Bloomer, T. E., Chang, S. -L., Lograsso, T. A., Shen, Z., Zhang, C. -M. and Thiel, P. A., Appl. Surf. Sci. 103, 485–493 (1996).Google Scholar
17. Shen, Z., Kramer, M. J., Jenks, C. J., Goldman, A. I., Lograsso, T., Delaney, D., Heinzig, M., Raberg, W. and Thiel, P. A., Phys. Rev. B 58, 9961–9971 (1998).Google Scholar
18. Shi, F., Shen, Z., Delaney, D. W., Goldman, A. I., Jenks, C. J., Kramer, M. J., Lograsso, T., Thiel, P. A. and Hove, M. A. Van, Surf. Sci. 411, 86–98 (1998).Google Scholar
19. Schaub, T. M., Biargler, D. E., Güntherodt, H. -J., Suck, J. B. and Audier, M., Appl. Phys. A 61, 491–501 (1995).Google Scholar
20. Naumovic, D., Aebi, P., Schlapbach, L., Beeli, C., Lograsso, T. A. and Delaney, D. W. In Proceedings of the 6th International Conference on Quasicrystals; edited by Takeuchi, S. and Fujiwara, T. (World Scientific, Tokyo 1998), pp. 749–756.Google Scholar
21. Gayle, F. W., Shapiro, A. J., Biancaniello, F. S. and Boettinger, W. J., Metallurgical Transactions A 23A, 2409–2417 (1992).Google Scholar
22. Gödecke, T. and Lück, R., Z. Metallkd. 86, 109–121 (1995).Google Scholar
23. Shen, Z., Stoldt, C. R., Jenks, C. J., Lograsso, T. and Thiel, P. A., manuscript in preparation.Google Scholar
24. Shi, F., Shen, Z., Delaney, D. W., Goldman, A. I., Jenks, C. J., Lograsso, T., Thiel, P. A. and Hove, M. A. Van, manuscript in preparation.Google Scholar
25. Boudard, M., Boissieu, M.de, Janot, C., Heger, G., Beeli, C., Nissen, H. -U., Vincent, H., Ibberson, R., Audier, M. and Dubois, J. M., J. Phys.: Condens. Matter 4, 10149–10168 (1992).Google Scholar
26. Schaub, T. M., Bürgler, D. E., Güntherodt, H. -J. and Suck, J. B., Phys. Rev. Lett. 73, 1255–1258 (1994).Google Scholar
27. Jenks, C. J., Chang, S. -L., Anderegg, J. W., Thiel, P. A. and Lynch, D. W., Phys. Rev. B 54, 6301–6306 (1996).Google Scholar
28. Chang, S. -L., Anderegg, J. W. and Thiel, P. A., J. Non-Cryst. Solids 195, 95–101 (1996).Google Scholar
29. Chang, S. -L., Zhang, C. -M., Jenks, C. J., Anderegg, J. W. and Thiel, P. A. In Proceedings of the 5th International Conference on Quasicrystals; edited by Janot, C. and Mosseri, R. (World Scientific, Singapore 1995), pp. 786–789.Google Scholar
30. Chang, S. -L., Chin, W. B., Zhang, C. -M., Jenks, C. J. and Thiel, P. A., Surf. Sci. 337, 135–146 (1995).Google Scholar
31. Pinhero, P. J., Chang, S. -L., Anderegg, J. W. and Thiel, P. A., Phil. Mag. B 75, 271–281 (1997).Google Scholar
32. Jenks, C. J., Pinhero, P. J., Chang, S. -L., Anderegg, J. W., Besser, M. F., Sordelet, D. J. and Thiel, P. A. In New Horizons in Quasicrystals: Research and Applications; edited by Goldman, A. I., Sordelet, D. J., Thiel, P. A. and Dubois, J. -M. (World Scientific, Ames, IA 1997), pp. 157–164.Google Scholar
33. Jenks, C. J., Pinhero, P. J., Bloomer, T. E., Chang, S. -L., Anderegg, J. W. and Thiel, P. A. In Proceedings of the 6th International Conference on Quasicrystals; edited by Takeuchi, S. and Fujiwara, T. (World Scientific, Tokyo 1998), pp. 761–764.Google Scholar
34. Pinhero, P. J., Anderegg, J. W., Sordelet, D. J., Besser, M. F. and Thiel, P. A., Phil. Mag. B (1998), in press.Google Scholar
35. Kang, S. -S. and Dubois, J. -M., J. Mater. Res. 10, 1071–1074 (1995).Google Scholar
36. Sordelet, D. J., Gunderman, L. A., Besser, M. F. and Akinc, A. B. In New Horizons in Quasicrystals: Research and Applications; edited by Goldman, A. I., Sordelet, D. J., Thiel, P. A. and Dubois, J. -M. (World Scientific, Ames, IA 1997), pp. 296–303.Google Scholar
37. Wehner, B. I. and Köster, U. In New Horizons in Quasicrystals: Research and Applications; edited by Goldman, A. I., Sordelet, D., Thiel, P. A. and Dubois, J. -M. (World Scientific, Ames, IA 1997), pp. 152–156.Google Scholar
38. Wehner, B. I. and Köster, U. In Proceedings of the 6th International Conference on Quasicrystals; edited by Takeuchi, S. and Fujiwara, T. (World Scientific, Tokyo 1998), pp. 773–776.Google Scholar
39. Jenks, C. J. and Thiel, P. A., J. Molec. Catal. A 131, 301–306 (1998).Google Scholar
40. Jenks, C. J., Lograsso, T. A. and Thiel, P. A., J. Am. Chem. Soc. (1998), in press.Google Scholar
41. Jacobi, K., Astaldi, C., Geng, P. and Bertolo, M., Surf Sci. 223, 569–577 (1989).Google Scholar
42. Ryberg, R., Phys. Rev. B 37, 2488–2490 (1988).Google Scholar
43. Paul, J. and Hoffmann, F. M., Chem. Phys. Lett. 130, 160–163 (1986).Google Scholar
44. Winkler, A., Pozgainer, G. and Rendulic, K. D., Surf Sci. 251/252, 886–890 (1991).Google Scholar
45. Stuve, E. M., Madix, R. J. and Brundle, C. R., Surf. Sci. 146, 155–178 (1984).Google Scholar
46. Behm, R. J., Christmann, K. and Ertl, G., Surf Sci. 99, 320–340 (1980).Google Scholar
47. Sieben, B. and Bonzel, H. P., Surf Sci. 282, 246–254 (1993).Google Scholar
48. Hrbek, J., J. Phys. Chem. 94, 1564–1570 (1990).Google Scholar
49. Chen, J. G., Basu, P., Ng, L. and Yates, J. T. Jr. Surf. Sci. 194, 397–418 (1988).Google Scholar
50. Rogers, J. W. Jr, Hance, R. L. and White, J. M., Surf Sci. 100, 388–406 (1980).Google Scholar
51. Chen, J. -J., Jiang, Z. -C., Zhou, Y., Chakraborty, B. R. and Winograd, N., Surf Sci. 328,248–262 (1995).Google Scholar
52. Rebholz, M. and Kruse, N., J. Chem. Phys. 95, 7745–7759 (1991).Google Scholar
53. Hartmann, N., Esch, F. and Imbihl, R., Surf Sci. 297, 175–185 (1993).Google Scholar
54. Bent, B. E., Chem. Rev. 96, 1361–1390 (1996).Google Scholar
55. Bent, B. E., Nuzzo, R. G., Zegarski, B. R. and Dubois, L. H., J. Am. Chem. Soc. 113, 1137–1142 (1991).Google Scholar
56. Bent, B. E., Kao, C. -T., Zegarski, B. R., Dubois, L. H. and Nuzzo, R. G., J. Am. Chem. Soc. 113, 9112–9119 (1991).Google Scholar
57. Kovdcs, I. and Solymosi, F., J. Phys. Chem. 97, 11056–11063 (1993).Google Scholar