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The Surface Behavior of a Binary Alloy During Production by Ion Implantation

Published online by Cambridge University Press:  15 February 2011

G. W. Reynolds
Affiliation:
State University of New York at Albany and NRL
F. R. Vozzo
Affiliation:
State University of New York at Albany and NRL
R. G. Alias
Affiliation:
Naval Research Laboratory, Washington, DC
A. R. Knudson
Affiliation:
Naval Research Laboratory, Washington, DC
J. M. Lambert
Affiliation:
Georgetown University, Washington, DC and NRL
P. A. Treado
Affiliation:
Georgetown University, Washington, DC and NRL
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Abstract

Thin surface copper-nickel alloys were prepared by ion implantation at 90 keV. During the implantation of one pure element by the other the sputtered products were collected on catcher foils at different stages from the beginning of the implant through to the steady state configuration of the target surface. The collector foils and targets were analyzed to determine the behavior of the sputtering yields during implantation and for the change in surface composition at the selected fluence. The total sputtering yield for the target and the effective elemental sputtering yields for each component appear to be functions of the changing surface fractions, the self ion sputtering yield of the implanted species, and the elemental sputtering yield of the initial target species. A model relating these parameters is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1.Hirvonen, J. K. (ed.), Treatise on Materials Science and Technology, (Academic Press, New York, 1980).Google Scholar
2.Sigmund, P., “Theoretical Concepts,” chapter 2 of Sputtering by Ion Bombardment, Behrisch, R., ed., (Springer, 1981).Google Scholar
3.Haff, P. K., Caltech Preprint BAP–7 (1976).Google Scholar
4.Haff, P. K., Appl. Phys. Lett. 31(4), 259 (1977).Google Scholar
5.Sigmund, P., J. Vac. Sci. Technol. 17(1), 396 (1980).Google Scholar
6.Haff, P. K. and Switowski, Z. E., Appl. Phys. Lett. 29(9), 549 (1976).Google Scholar
7.Andersen, H. H., “Sputtering of Multicomponent Metals and Semiconductors,” SPIG 1980, Matini, M. ed., (Boris Kidric Institute of Nuclear Sciences, Yugoslavia), pp. 421–83.Google Scholar
8.Kelly, R., Nucl. Instrum. Methods, 149, 553 (1978).Google Scholar
9.Collins, R., Radiat. Eff., 37, 19 (1979).Google Scholar
10.Reynolds, G. W., Knudson, A. R., and Gossett, C. R., Nucl. Instrum. Methods 181/183, 179 (1981).Google Scholar
11.Allas, R. G., Knudson, A. R., Lambert, J. M., Treado, P. A., and Reynolds, G. W., in Proc. 9th Int. Conf. on Atomic Collisions in SolidsLyon(1981) (in press).Google Scholar
12.Gschneider, K. A., Solid State Phys. 16, 275 (1964).Google Scholar
13.Jackson, D. P., Radiat. Eff. 18, (1973) 185.Google Scholar