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Surface and Interface Damage Characterization of Reactive Ion Etched MBE Regrown GaAs

Published online by Cambridge University Press:  25 February 2011

M.W. Cole ,
M. Dutta ,
J. Rossabi ,
D.D. Smith  and
J.L. Lehman
M.W. Cole
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
M. Dutta
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
J. Rossabi
Affiliation:
Quest Tech. Inc., Eatontown, N.J. 07724
D.D. Smith
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
J.L. Lehman
Affiliation:
JEOL USA Inc., Peabody, Mass. 01960
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Abstract

Damage resulting from reactive ion etching (RIE) and wet etching of MBE grown GaAs and the defects generated in subsequent GaAs regrowth was evaluated by Transmission Electron Microscopy (TEM), photoluminescence (PL) , and Raman spectroscopy. The samples were reactively etched with HCl and Cl2 at two power densities; 0.3 W/cm2 and 0.6 W/cm2. A wet chemical (H2O:H3PO4:H2O2) etched sample was used for comparison. The LO phonon intensities measured by room temperature Raman spectroscopy showed a strong correlation to the relative PL intensities, where the HCl sample was found to be inferior to the others. TEM microstructural evaluation showed both HCl RIE samples to have significant interface roughness, with the sample etched at 0.6 W/cm2 showing the most structural damage in the regrowth region. Defect densities for the Cl2. and wet etched samples were two orders of magnitude lower than that of the HCl etched samples. The extent of disorder in the regrowth region was largest for the HCl sample with respect to the Cl2 and wet etched samples. These microstructural and optical results suggest that the H+ ion plays an important role in the generation of crystal defects during the RIE process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 987
Copyright
Copyright © Materials Research Society 1990

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