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Surface and Defect Structure of Epitaxial Gallium Phosphide on Si(001)

Published online by Cambridge University Press:  21 February 2011

A. E. Miller ,
J. T. Kelliher ,
N. Dietz  and
K. J. Bachmann
A. E. Miller
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
J. T. Kelliher
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
N. Dietz
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
K. J. Bachmann
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
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Abstract

Epitaxial GaP films grown on silicon by chemical beam epitaxy contain planar defects that are related to three dimensional island formation of GaP nucleating on the silicon substrate. Attention in the surface preconditioning and to the surface chemistry during the initial stages of nucleation and growth allow the control from pronounced three-dimensional growth behavior toward almost two-dimensional growth. New results on defect structure and surface morphology obtained by a combination of atomic force microscope (AFM) and a new method p-polarized reflectance spectroscopy (PRS) are presented and related to growth conditions during the initial stages of heteroepitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 197
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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