Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:32:18.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface and Bulk GAP States Distributions in Amorphous Silicon Films as Obtained by Optical Methods

Published online by Cambridge University Press:  21 February 2011

G. Amato ,
G. Benedetto ,
L. Boarino ,
F. Giorgis  and
R. Spagnolo
G. Amato
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135, Turin, Italy.
G. Benedetto
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135, Turin, Italy.
L. Boarino
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135, Turin, Italy.
F. Giorgis
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135, Turin, Italy.
R. Spagnolo
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135, Turin, Italy.
Get access

Abstract

The aim of this work is to achieve detailed information about surface and bulk density of states in device quality a-Si:H films by means of deconvolution of PDS spectra. Unambiguous deconvolution of the spectra has been performed by calculating the first derivative vs. energy of the absorption coefficient of the samples. The results are compared with those obtained by means of the integration rule. Calculations of the density of states carried out on samples having different thickness suggest that the defect distribution differs from surface to bulk. The surface defect peaks are found to lie closer to the corresponding mobility edges, with respect to the bulk defect peaks: these results agree well with those obtained by means of other techniques, like total yield spectroscopy and can be explained in terms of a defect pool model.

The present deconvolution procedure when applied to samples having different thickness provides new results about the film's homogeneity in terms of deep defect and valence tail states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 299
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Curtins, H. and Favre, M. in “Advances in Disordered Semiconductors, Vol. 1, Amorphous Silicon and Related Materials, Vol. A Fritzsche, H. ed. (World Scientific, Singapore), (1988).Google Scholar
2) Schumm, G. and Bauer, G. H. in Mat Res. Soc. Symp. Proc. 192. (Materials Research Society, Pittsburgh), (1990).Google Scholar
3) Kocka, J., Vanecek, M., and Triska, A. in “Advances in Disordered Semiconductors, Vol. 1, Amorphous Silicon and Related Materials, Vol. A” Fritzsche, H. ed. (World Scientific, Singapore), (1988).Google Scholar
4) Amato, G., Benedetto, G., Boarino, L., Maringelli, M. and Spagnolo, R., Appl. Phys. A 52, 280 (1991).CrossRefGoogle Scholar
5) Amato, G., Giorgis, F. and Spagnolo, R., Jour, of Appl. Phys., in press.Google Scholar
6) Amato, G., Benedetto, G., Boarino, L. and Spagnolo, R., Appl. Phys. A 50, 503 (1990).Google Scholar
7) Amato, G., Boero, M., Fizzotti, F., Giorgis, F., to be published.Google Scholar
8) Amer, N.M., Jackson, W.B. in “Semiconductors and Semimetals” Pankove, J.I. ed. 21 part B (Academic, London), (1984).Google Scholar
9) Li, Y.M. and Paul, W. in Mat. Res. Soc. Symp. Proc. 219, (Materials Research Society, Pittsburgh), (1991).Google Scholar
10) Pierz, K., Mell, H. and Fuhs, W. in Mat. Res. Soc. Symp. Proc. 192, (Materials Research Society, Pittsburgh), (1990).Google Scholar
11) Wagner, S., Chu, D., Shen, D.S., Conde, J.P., Aljishi, S. and Smith, Z. E. Mat. Res. Soc. Symp. Proc. 192 (Materials Research Society, Pittsburgh), (1988).Google Scholar
12) Smith, Z. E. and Wagner, S. in “Advances in Disordered Semiconductors, Vol. 1, Amorphous Silicon and Related Materials, Vol. A” Fritzsche, H. ed. (World Scientific, Singapore), (1988).Google Scholar
13) Winer, K. and Ley, L. in “Advances in Disordered Semiconductors, Vol. 1, Amorphous Silicon and Related Materials, Vol. A” Fritzsche, H. ed. (World Scientific, Singapore), (1988).Google Scholar