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Surface Analysis During the Growth of Ge and GexSi1−x Alloys on Si by Reflection Electron Energy Loss Spectrometry

Published online by Cambridge University Press:  21 February 2011

Channing C. Ahn ,
Shouleh Nikzad  and
Harry A. Atwater
Channing C. Ahn
Affiliation:
California Institute of Technology Pasadena, CA 91125
Shouleh Nikzad
Affiliation:
California Institute of Technology Pasadena, CA 91125
Harry A. Atwater
Affiliation:
California Institute of Technology Pasadena, CA 91125
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Abstract

Using a conventional 30 keV reflection high energy electron diffraction gun on a custom built molecular beam epitaxy system together with an energy loss analyser, we have combined in situ measurements of inelastically scattered electrons from Si L2,3 (99 eV) and Ge L2,3 (1217 eV) core losses with reflection electron diffraction data in order to study the initial stages of Ge heteroepitaxy on Si (001). Diffraction data indicate Stranski-Krastanov growth mode and indicate islanding for Ge thicknesses greater than 0.3 nm. The normalized core loss intensities from electron energy loss data are consistent with a simple model based on grazing incidence electron scattering from the growing Ge film.

Additional experiments designed to determine the surface composition sensitivity from Si K (1840 eV) and Ge L2,3 ionization cross-sections reveal that accurate values of composition for a dilute GexSi1−x alloy (x=0.02) can be obtained from raw data when compared with Rutherford Backscattering and Transmission Electron Microscopy/X-ray microanalysis measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 251
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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