The growth and energetics of Ga chains on a Si(112) facet surface have been investigated. Low energy electron diffraction (LEED) and Reflectance Difference Anisotropy (RDA) experiments have been performed in UHV to examine the kinetics of the Ga atom chain formation process along the Si steps. This is a self-limiting process for substrate temperatures in the 400°C to 500°C range, since the binding energy of the metal atoms at the step edges is greater than that on the (11l)-type terraces. At saturation coverage, the Ga chains exhibit sixfold periodicity along the step edges, but below saturation, these chains exhibit fivefold periodicity. A model has been suggested from these results in which the periodicities of the chains are determined by the metal atom vacancies, which balance the tensile stress created by the larger metal atoms. We have used RDA to study the time evolution of the surface kinetics and changes in the surface reconstruction of Ga deposited on these facet (112) Si surfaces, as a function of substrate temperature and Ga deposition rate. The RDA measurement is shown to be sensitive to the formation of both the 5×1 as well as 6 × 1 reconstructions and to island formation at low substrate temperatures. The diffusion-controlled Ga line formation process at low temperatures has also been characterized as well as the evaporation controlled regime, which is evident at substrate temperatures over 400°C.