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Super-Resolution Readout for Magneto-Optical Disk by Optimizing the Deposition Condition of Non-Magnetic Mask Layer

Published online by Cambridge University Press:  21 March 2011

Takayuki Shima ,
Johoo Kim ,
Hiroshi Fuji ,
Nobufumi Atoda  and
Junji Tominaga
Takayuki Shima
Affiliation:
Laboratory for Advanced Optical Technology (LAOTEC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
Johoo Kim
Affiliation:
Laboratory for Advanced Optical Technology (LAOTEC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
Hiroshi Fuji
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
Nobufumi Atoda
Affiliation:
Laboratory for Advanced Optical Technology (LAOTEC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
Junji Tominaga
Affiliation:
Laboratory for Advanced Optical Technology (LAOTEC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Abstract

Super-resolution near-field structure (Super-RENS) was prepared by a heliconwave-plasma sputtering method to improve the disk property that is combined with a magneto-optical (MO) recording disk. Antimony and silver-oxide mask layers were prepared by the method and refractive indices were measured. Recording and retrieving of signals beyond the resolution limit (<370 nm) were achieved for both mask cases. Attempts to optimize the disk structure were also made using a conventional sputtering method. The smallest mark size was around 200 nm and the highest carrier-to-noise ratio (CNR) was 30 dB for 300-nm mark and 22 dB for 250-nm, when using a laser wavelength of 780 nm and a numerical aperture of 0.53. We have found that there is a competing super-resolutional mechanism besides Super-RENS that appears when high readout laser power is applied. This mechanism played rather an important role at least in the mark-size range of 200-370 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 674: Symposia T/U/V – Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics , 2001 , V2.2
Copyright
Copyright © Materials Research Society 2001

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References

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