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The Superlattice Diffusion Probe: A Tool for Modeling Diffusion in III-V Semiconductors

Published online by Cambridge University Press:  26 February 2011

E. L. Allen ,
C. J. Pass ,
M. D. Deal ,
J. D. Plummer  and
V. F. K. Chia
E. L. Allen
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
C. J. Pass
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
M. D. Deal
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
J. D. Plummer
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
V. F. K. Chia
Affiliation:
Charles Evans and Associates, 301 Chesapeake Dr., Redwood City, CA 94063
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Abstract

Undoped AlAs/AlxGa1−xAs superlattice structures were grown by molecular beam epitaxy and annealed under Si3N4, SiO2 or WNX encapsulant films, both with and without the presence of implanted Sn. Enhancement of the Al-Ga interdiffusion coefficient occurred under the Si3N4 film due to in-diffusion of Si. Enhancement was even greater during diffusion of the Sn implant under both Si3N4 and SiO2. Underneath the WNX film, however, interdiffusion was suppressed even in the presence of Sn. We simulated these results with SUPREM IV and show that both the Fermi level effect and vacancy injection from the cap are necessary to cause significant enhancement of Al-Ga superlattice disordering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 709
Copyright
Copyright © Materials Research Society 1992

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References

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