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Supercritical Fluid Treatment to Improve Dielectric and Mechanical Properties of Porous ULK Thin Films

Published online by Cambridge University Press:  01 February 2011

Julien Beynet
Affiliation:
[email protected], Air Liquide, CRCD, 13 rue LAFONTAINE, SEYSSINET, N/A, 38170, France
Vincent Jousseaume
Affiliation:
[email protected], CEA/LETI, 17 rue des Martyrs, Cedex 9, Grenoble, N/A, 38054, France
Alain Madec
Affiliation:
[email protected], Air Liquide, 1 Chemin de la Porte des Loges, B.P. 126, Jouy-en-Josas, N/A, 78354, France
Bruno Rémiat
Affiliation:
[email protected], CEA/LETI, 17 rue des Martyrs, Cedex 9, Grenoble, N/A, 38054, France
N. Dominique Albérola
Affiliation:
[email protected], LMOPS, bâtiment IUT, Le Bourget du Lac, N/A, 73376, France
Régis Mercier
Affiliation:
[email protected], LMOPS, bâtiment IUT, Le Bourget du Lac, N/A, 73376, France
Gérard Passemard
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
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Abstract

Spin-on glass organosilicate films are promising Ultra Low-ĸ (ULK) interlevel dielectric candidates in which porosity can be created by incorporating thermally labile porogens. The as-deposited film (called the hybrid film) consists of a methylsilsesquioxane (MSQ) matrix and an organic porogen. The standard porogen removal step consists of a 450°C thermal annealing. However, it leaves polymeric residues suspected to cause an incomplete matrix crosslinking and, consequently, to be detrimental to the porous film's electrical and mechanical properties. In this work, a supercritical fluid (SCF) treatment, performed on a 200 mm tool, was added before the thermal annealing with the intent of improving the dielectric properties. Electrical and mechanical properties were greatly enhanced: the dielectric constant was reduced from 2.5 to 2.1 and the Young's modulus was increased from 2 GPa to 3 GPa. Porogen residue removal and cross-linking improvements were investigated by Fourier Transform Infrared (FTIR) spectroscopy in transmission and multiple internal reflection (MIR) mode.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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