Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T02:08:11.510Z Has data issue: false hasContentIssue false
  • English
  • Français

Supercritical Fluid Treatment to Improve Dielectric and Mechanical Properties of Porous ULK Thin Films

Published online by Cambridge University Press:  01 February 2011

Julien Beynet ,
Vincent Jousseaume ,
Alain Madec ,
Bruno Rémiat ,
N. Dominique Albérola ,
Régis Mercier  and
Gérard Passemard
Julien Beynet
Affiliation:
[email protected], Air Liquide, CRCD, 13 rue LAFONTAINE, SEYSSINET, N/A, 38170, France
Vincent Jousseaume
Affiliation:
[email protected], CEA/LETI, 17 rue des Martyrs, Cedex 9, Grenoble, N/A, 38054, France
Alain Madec
Affiliation:
[email protected], Air Liquide, 1 Chemin de la Porte des Loges, B.P. 126, Jouy-en-Josas, N/A, 78354, France
Bruno Rémiat
Affiliation:
[email protected], CEA/LETI, 17 rue des Martyrs, Cedex 9, Grenoble, N/A, 38054, France
N. Dominique Albérola
Affiliation:
[email protected], LMOPS, bâtiment IUT, Le Bourget du Lac, N/A, 73376, France
Régis Mercier
Affiliation:
[email protected], LMOPS, bâtiment IUT, Le Bourget du Lac, N/A, 73376, France
Gérard Passemard
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
Get access

Abstract

Spin-on glass organosilicate films are promising Ultra Low-ĸ (ULK) interlevel dielectric candidates in which porosity can be created by incorporating thermally labile porogens. The as-deposited film (called the hybrid film) consists of a methylsilsesquioxane (MSQ) matrix and an organic porogen. The standard porogen removal step consists of a 450°C thermal annealing. However, it leaves polymeric residues suspected to cause an incomplete matrix crosslinking and, consequently, to be detrimental to the porous film's electrical and mechanical properties. In this work, a supercritical fluid (SCF) treatment, performed on a 200 mm tool, was added before the thermal annealing with the intent of improving the dielectric properties. Electrical and mechanical properties were greatly enhanced: the dielectric constant was reduced from 2.5 to 2.1 and the Young's modulus was increased from 2 GPa to 3 GPa. Porogen residue removal and cross-linking improvements were investigated by Fourier Transform Infrared (FTIR) spectroscopy in transmission and multiple internal reflection (MIR) mode.

Keywords

dielectricmicroelectronicsinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F02-08
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Weibel, G.L., Ober, C.K., Microelectronic Engineering 65 (2003) 145–152.Google Scholar
2 Calvert, J.M., Gallagher, M.K., Semiconductor international (2003) 56.Google Scholar
3 Perrut, V., Clavelier, J.-Y., Lazure, S., Danel, A. and Millet, C., International symposium on supercritical fluids, Versailles, France, 2003.Google Scholar
4 Harrick, N.J., Internal Reflection Spectroscopy, Wiley, New York, 1967.Google Scholar
5 Ciaramella, F., Jousseaume, V., Maitrejean, S., Rémiat, B., Verdier, M. and Passemard, G., Mater. Res. Soc. Symp. Proc. Vol. 863 2005.Google Scholar
6 Klein, L.C., Sol-gel technology for thin films, fibers, preforms, electronics and specialty shapes, Noyes publications.Google Scholar
7 Fadeev, A.Y., McCarthy, T.J., Langmuir (1999) 15, 3759–3766.Google Scholar
8 Israelachvili, J.N., Gee, M.L., Langmuir (1989), 5, 288–289.Google Scholar
9 Rochat, N., Troussier, A., Hoang, A., Vinet, F., Materials Science in Semiconductor Processing 4 (2001).Google Scholar