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Supercritical CO2 Treatments for SemiconductorApplications

Published online by Cambridge University Press:  17 March 2011

S. Gangopadhyay
Affiliation:
Dept. of Electrical and Computer Engg., University of Missouri, Columbia, MO, 65211
J.A. Lubguban
Affiliation:
Dept. of Electrical and Computer Engg., University of Missouri, Columbia, MO, 65211
B. Lahlouh
Affiliation:
Dept. of Electrical and Computer Engg., University of Missouri, Columbia, MO, 65211
G. Sivaraman
Affiliation:
Nano-Tech Center, Texas Tech University, Lubbock, TX 79409
K. Biswas
Affiliation:
Dept. of Electrical and Computer Engg., University of Missouri, Columbia, MO, 65211
T. Rajagopalan
Affiliation:
Nano-Tech Center, Texas Tech University, Lubbock, TX 79409
N. Biswas
Affiliation:
Nano-Tech Center, Texas Tech University, Lubbock, TX 79409
H. -C. Kim
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
W. Volksen
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
R. D. Miller
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
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Abstract

Supercritical fluids (SF) have been used in a wide variety of applications:in industrial processes, analytical, waste detoxification, etc. Recently,its usefulness extends to the semiconductor industry. Researches have shownthat supercritical CO2 (SCCO2) can be used to removephotoresists and significantly reduce the amount of waste from solvents incomparison to conventional stripping techniques. SF will also find itsusefulness in cleaning high aspect ratio vias and deep trenches assemiconductor features shrink to submicron levels. We will report here theuse of supercritical CO2 treatments in extraction of porogensfrom a nanohybrid film fabricated via templated-porogen approach. Its use asa medium to repair the damage in porous films from plasma ashing will alsobe presented. The ability to tune the solvation and diffusion power of SCCO2 and to swell the film matrix make it a good medium forsilylation to restore hydrophobicity and functionalize the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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