Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:26:39.683Z Has data issue: false hasContentIssue false

Superconductivity in Granular Snx (SiO2)100−x Thin Films

Published online by Cambridge University Press:  28 February 2011

John R. Beamish
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716
B.M. Patterson
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716
K.M. Unruh
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716
Get access

Abstract

The resistivity of sputter deposited Snx (SiO2)100−x films has been measured for Sn concentration x between 50 and 90 atomic percent. Films with more than 53 percent Sn are superconducting at low temperatures with transition temperatures slightly above that of bulk Sn. The enhancement is 0.11 K for the 90 percent film, increasing to 0.24 K in the 55 percent film. As the metal concentration decreases, the transition region broadens, with the resistance beginning to decrease about 1 K above the transition in the highest resistance films. The films remain superconducting in substantial magnetic fields. In the 55 percent film, a magnetic field of 1 T reduces the transition temperature by 1 K and a field greater than 2 T is needed to eliminate superconductivity. At the largest field of 6 T, there is no sign of superconductivity in any sample, and the resistances increase down to the lowest temperatures measured (100 mK).

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shalnikov, A., Nature 142, 74 (1938).Google Scholar
2. Cohen, R. W. and Abeles, B., Phys. Rev. 168, 444 (1968); J.J. Hauser, Phys. Rev. B3, 1611 (1971).Google Scholar
3. Orr, B.G., Jaeger, H.M. and Goldman, A.M., Phys. Rev. B32, 7586 (1985); A.E. White, R.C. Dynes and J.P. Garno, Phys. Rev. B33, 3549 (1986).Google Scholar
4. Kunchur, M., Lindenfeld, P., McLean, W.L. and Brooks, J.S., Phys. Rev. Lett. 59, 1232 (1987); Y.Z. Zhang, M. Kunchur, T. Tsuboi, P. Lindenfeld and W.L. McLean, Jap. J. Appl. Phys. 26, 1311 (1987).Google Scholar
5. Gerber, A. and Deutscher, G., Phys. Rev. Lett. 63, 1184 (1989); H.M. Jaeger, D.B. Haviland, A.M. Goldman and B.G. Orr, Phys. Rev. B34, 4920 (1986).Google Scholar
6. Simon, R.W., Dalrymple, B.J., Vechten, D. Van, Fuller, W.W. and Wolf, S.A., Phys. Rev. B36, 1962 (1987).Google Scholar
7. Dmitrenko, I.M. et al. , Soy. Phys. JETP 63, 1210 (1986).Google Scholar