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Superconducting Critical Temperatures of C-Implanted Al5 Structure V-Si

Published online by Cambridge University Press:  15 February 2011

J. R. Gavaler ,
A. I. Braginski ,
A. S. Manocha ,
B. R. Appleton ,
C. W. White  and
J. M. Williams
J. R. Gavaler
Affiliation:
Westinghouse R&D Center, Pittsburgh, Pennsylvania 15235
A. I. Braginski
Affiliation:
Westinghouse R&D Center, Pittsburgh, Pennsylvania 15235
A. S. Manocha
Affiliation:
Westinghouse R&D Center, Pittsburgh, Pennsylvania 15235
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
J. M. Williams
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
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Abstract

A series of A15 structure V-Si films were sputtered with compositions ranging from approximately V90Si10 to V75Si25 . The as-deposited critical temperature onsets were between ~ 8 and 17K. Carbon levels of up to 5 at.%(average) were implanted and the films subsequently annealed at various temperatures between 650 and 1050°C. No Tc's above 17K were obtained in the C-implanted films. However enhancements of as much as ~ 9K, from ~ 8 to 17K, in highly Si-deficient films indicated that carbon was incorporated into the A15 structure of these films to form pseudo-binary V-Si-C alloys. Experimental details are given and some reasons why Tc values greater than 17K were not obtained are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 287
Copyright
Copyright © Materials Research Society 1982

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Footnotes

+

Supported by the Department of Energy.

*

Supported in part by the Air Force Office of Scientific Research Contract No. F49620–78–C–0031.

References

REFERENCES

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