Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:48:28.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Superconducting Critical Temperatures of C-Implanted Al5 Structure V-Si

Published online by Cambridge University Press:  15 February 2011

J. R. Gavaler ,
A. I. Braginski ,
A. S. Manocha ,
B. R. Appleton ,
C. W. White  and
J. M. Williams
J. R. Gavaler
Affiliation:
Westinghouse R&D Center, Pittsburgh, Pennsylvania 15235
A. I. Braginski
Affiliation:
Westinghouse R&D Center, Pittsburgh, Pennsylvania 15235
A. S. Manocha
Affiliation:
Westinghouse R&D Center, Pittsburgh, Pennsylvania 15235
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
J. M. Williams
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
Get access

Abstract

A series of A15 structure V-Si films were sputtered with compositions ranging from approximately V90Si10 to V75Si25 . The as-deposited critical temperature onsets were between ~ 8 and 17K. Carbon levels of up to 5 at.%(average) were implanted and the films subsequently annealed at various temperatures between 650 and 1050°C. No Tc's above 17K were obtained in the C-implanted films. However enhancements of as much as ~ 9K, from ~ 8 to 17K, in highly Si-deficient films indicated that carbon was incorporated into the A15 structure of these films to form pseudo-binary V-Si-C alloys. Experimental details are given and some reasons why Tc values greater than 17K were not obtained are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 287
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

+

Supported by the Department of Energy.

*

Supported in part by the Air Force Office of Scientific Research Contract No. F49620–78–C–0031.

References

REFERENCES

1.Ilonca, G. and Barbee, T. W. Jr., Phys. Stat. Sol. 47, 357 (1978).Google Scholar
2.Gavaler, J. R., Appl. Phys. Lett. 23, 480 (1973).Google Scholar
3.Manning, Irwin and Mueller, G. P., Computer Phys. Comm. 7, 85 (1974).Google Scholar
4.Cadieu, F. J., “Superconductivity in d- and f-Band Metals,” Douglass, D. H., Ed., AIP Conf. Proc.No. 4(1972) p. 213.Google Scholar