Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T10:33:13.043Z Has data issue: false hasContentIssue false
  • English
  • Français

Superadditivity in the Implantation of Molecular Ions

Published online by Cambridge University Press:  25 February 2011

G. F. Cerofolini ,
L. Meda  and
C. Volpones
G. F. Cerofolini
Affiliation:
EniChem, via Medici del Vascello 26, 20138 Milano MI, Italy
L. Meda
Affiliation:
ST Microelectronics, 20041 Agrate MI, Italy
C. Volpones
Affiliation:
ST Microelectronics, 20041 Agrate MI, Italy
Get access

Abstract

This paper deals with the implantation of molecular ions in silicon. The ‘molecular’ effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, is weak for light molecules (e.g., H2) and for heavy diatomic molecules (e.g., Sb2 and Bi2), but, for instance, it is strong for C6H6 at energy per atomic mass of the order of 1 keV/amu. Binary collision calculations are used to give a pictorial view of the phenomena occurring along the ion path, and to predict superadditivity and damage columnarity. The increase of pressure and temperature to extreme conditions by implantation of molecular ions is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 181
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cerofolini, G.F. and Meda, L., Phys. Rev. B 36, 5131 (1987).Google Scholar
2. Cerofolini, G.F., Meda, L. and Volpones, C., J. Appl. Phys. 63, 4911 (1988).Google Scholar
3. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 42, 698 (1983); J. Appl. Phys. 57, 1795 (1985).Google Scholar
4. Averback, R.S., presented at the Workshop on the Effects of Recoil Spectrum and Nuclear Transmutation on the Evolution of the Microstructure, Lugano, March 1988.Google Scholar
5. Mueller, H., Ryssel, H. and Ruge, I., in: Proc. 2nd Intl. Conf. Ion Implantation, Ruge, I. and Graul, J. eds., Springer-Verlag, Berlin, (1971) p. 85.Google Scholar
6. Vandervost, W., Houghton, D.C., Shepherd, F.R., Swanson, M.L., Plattner, H.L. and Carpenter, G.J.C., Can. J. Phys. 63, 863 (1985).Google Scholar
7. Brotherton, S.D., Gowers, J.P., Young, N.D., Clegg, J.B. and Ayres, J.R., J. Appl. Phys. 60, 3567 (1986).CrossRefGoogle Scholar
8. Mitchell, J.B., Davies, J.A., Howe, L.M., Walker, R.S., Winterbon, K.B., Foti, G. and Moore, J.A., in: Ion Implantation in Semiconductors, Namba, S. ed., Plenum Press, New York, NY (1975) p. 493.Google Scholar
9. Thompson, D.A., Golanski, A., Haugen, K.H., Stefanovic, D.V., Carter, G. and Christoulides, C.E., Radiat. Eff. 52, 69 (1980).Google Scholar
10. Thompson, D.A., Walker, R.S. and Davies, J.A., Radiat. Eff. 32, 135 (1977).Google Scholar
11. Grob, A., Grob, J.J. and Golanski, A., Nucl. Instrum. Meth.B 19/20, 55 (1987).Google Scholar
12. Davies, J.A., Foti, G., Howe, L.M., Mitchell, J.B. and Winterbon, K.B., Phys. Rev. Lett. 34, 1441 (1975).Google Scholar
13. Fano, U., Ann. Rev. Nucl. Sci. 13, 1 (1963).CrossRefGoogle Scholar
14. Robinson, M.T. and Torrens, I.M., Phys. Rev. B 9, 5008 (1974).Google Scholar
15. Assuming, as done in ref. [12], that y observed in the implantation of carbon at 8.8 keV is exclusively due to v-i, allows us to determine the values of binding energy U b and quit energy E q required by MARLOWE to describe the formation of the v-i pair. These values are U b ≃ 40 eV and E q ≃ 40 eV.Google Scholar
16. Howe, L.M., Rainville, M.H., Haugen, H.K. and Thompson, D.A., Nucl. Instrum. Meth. 170, 419 (1980).Google Scholar
17. Howe, L.M. and Rainville, M.H., Nucl. Instrum. Meth. B 19/20, 61 (1987).Google Scholar
18. Gibbons, J.F., Johnson, W.S. and Mylroie, S.W., Projected Range Statistics, Dowden, Hutchinson & Ross, Stroudsburg, PA (1975).Google Scholar
19. No latent heat has been considered for this estimate; it existence and value do not modify the following considerations.Google Scholar
20. Jeanloz, R., Nature 325, 303 (1987).Google Scholar
21. Cotton, F.A. and Wilkinson, G., Advanced Inorganic Chemistry, John Wiley & Sons, New York (1980) p. 1020.Google Scholar
22. Cerofolini, G.F. and Meda, L., Italian Patent No. 20321A/87 (April 1987).Google Scholar