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Super Poly-Si And Transistor Formed by Nickel-Induced-Lateral-Crystallization

Published online by Cambridge University Press:  17 March 2011

C.F. Cheng ,
T.C. Leung  and
M.C. Poon
C.F. Cheng
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
T.C. Leung
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M.C. Poon
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
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Abstract

Nickel-Induced-Lateral-Crystallization (NILC) was carried out on a 6000 Å amorphous Si (a-Si) layer. 6000 Å NILC poly-Si was formed and the upper 5000 Å Si layer was then removed. When compared to the conventional 1000 Å NILC poly-Si, the bottom 1000 Å NILC poly-Si layer was found to have relatively larger grains, less grain boundaries and better transistor mobility. The new high quality (super) NILC poly-Si layer can potentially provide greater contributions for novel device and circuit applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.4
Copyright
Copyright © Materials Research Society 2001

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References

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