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Sulfur Segregation in Ion-Implanted and RTA'd Silicon

Published online by Cambridge University Press:  28 February 2011

R. A. Herring  and
H. M. Clearfield
R. A. Herring
Affiliation:
Martin Marietta Laboratories 1450 S. Rolling Road Baltimore, MD 21227
H. M. Clearfield
Affiliation:
Martin Marietta Laboratories 1450 S. Rolling Road Baltimore, MD 21227
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Abstract

The segregation of 6 Mev S-implanted Si during RTA between 700 and 1200 °C has been closely studied. A model has been proposed in which self-interstitial atoms induce S to segregate into the bulk Si at ∼700°C and vacancies induce S to segregate towards the implanted surface at the higher temperatures. The binding energy between the SIA and S has been measured to be ∼0.5 eV.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 711
Copyright
Copyright © Materials Research Society 1987

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References

1. Anthony, T.R., Acta Met., 17, 603 (1969).Google Scholar
2. Phase Transformation During Irradiation, ed. Nolfl, F.V. Jr., Applied Science Ltd., New York, (1983)Google Scholar
3. Wilson, R.G., J. Appl. Phys. 55(10), 3490 (1984).Google Scholar
4. Trumbore, F.A., Bell Syst. Tech. J. 206, 1960.Google Scholar
5. Maher, D.M. et al., MRS Proceedings, 52, 93 (1986).Google Scholar
6. Tamura, M. et al., J. Appl. Phys. 59(10), 3417 (1986).Google Scholar
7. Pennycook, S.J. et al., J. Mater. Res. 1(3), 476 (1986).Google Scholar
8. Ziegler, J.F.. Ion Implantation Science and Technology, Ed. Ziegler, J.F., Academic Press, New York 51, (1984).CrossRefGoogle Scholar
9. Janzen, E. et el., Phys. Rev. B, 29(4). 1907 (1984).Google Scholar
10. Howe, L.M. et al., Nucl. Inst. & Math., 170, 419 (1980).Google Scholar
11. Brown, L.M. et al., Phil. Mag., 19, 721 (1969).Google Scholar
12. Yoshida, N. & Kiritani, M., J. Phys. Soc. Jpn., 35, 1418 (1973).CrossRefGoogle Scholar
13. Brown, L.M. & Fathy, D., Phil. Mag. B, 43(4), 715 (1981).Google Scholar
14. Limoge, Y. and Barbu, A., Phys. Rev. B 30, 2212 (1984).Google Scholar
15. Moine, P. et al., Nucl. Instr. & Meth. B7/8, 20 (1985).Google Scholar
16. Integrated Silicon Device Tech., Research Triangle Inst., ASD-TDR-63-316 (1964).Google Scholar
17. Swanson, M.L. et al., Rad. Eff., 35, 51 (1978).Google Scholar
18. Saris, F.W. (Inst. Phys., London 1981) Conf. Ser. 59, p. 111.Google Scholar
19. Bourgoin, J. & Lannoo, N., Springer Ser. in Sol. St. Sci. 35, 266 Springer, New York (1983).Google Scholar
20. Watkins, G.D., Inst. Phys. Conf. Ser. 23, 1 (1975).Google Scholar
21. Markevich, V.P. & Murin, L.I., Phys. Stat. Sol.(a) 96, K151 (1986).Google Scholar
22. Sevatyanov, K.N. & Umarova, F.T., Soy. Phys. Sol. St., 12(7), 1756 (1971).Google Scholar
23. Watkins, G.D. & Corbett, J.W., Phys. Rev., 138(2A), A543 (1965).Google Scholar