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Sulfur Segregation in Ion-Implanted and RTA'd Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
The segregation of 6 Mev S-implanted Si during RTA between 700 and 1200 °C has been closely studied. A model has been proposed in which self-interstitial atoms induce S to segregate into the bulk Si at ∼700°C and vacancies induce S to segregate towards the implanted surface at the higher temperatures. The binding energy between the SIA and S has been measured to be ∼0.5 eV.
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