Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T18:05:15.948Z Has data issue: false hasContentIssue false
  • English
  • Français

Sulfidization in Alcoholic Solutions: A New Surface Passivation Method for GaAs

Published online by Cambridge University Press:  26 February 2011

Vasily N. Bessolov ,
Andrew F. Ivankov ,
Elena V. Konenkova  and
Mikhail V. Lebedev
Vasily N. Bessolov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg, 194021, Russia.
Andrew F. Ivankov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg, 194021, Russia.
Elena V. Konenkova
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg, 194021, Russia.
Mikhail V. Lebedev
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg, 194021, Russia.
Get access

Abstract

A new approach to GaAs surface passivation is suggested which consists in the treatment of GaAs in sulfide solutions in which different alcohols are used as solvents. It has been found that the photoluminescence efficiency of sulfide-treated GaAs associates with the dielectric constant of the solvent being used. With the decrease of dielectric constant value the PL intensity of sulfidized GaAs increases. Sulfidizing in isopropanol-, butanol- or t-butanol-based solutions leads to the formation of sulfide coat which PL properties remain constant even after strong laser irradiation. The effect of the solvent on the GaAs PL efficiensy is explained whithin the framework of hard and soft acids and bases. Thus the use of alcohol-based sulfide solution with low dielectric constant value greatly reduces surface recombination losses in sulfide-treated GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 1019
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yablonovitch, E., Sandroff, C.J., Bhat, R., and Gmitter, T., Appl. Phys. Lett., 51, 439, (1987).Google Scholar
2. Lunt, S.R., Santangelo, P.G., and Lewis, N.S., J. Vac. Sci. Technol. A., 9, 2333 (1991).Google Scholar
3. Pearson, R.G., J. Am. Chem. Soc, 85, 3533 (1963).Google Scholar
4. Bessolov, V.N., Lebedev, M.V., Novikov, E.B., and Tsarenkov, B.V., J. Vac. Sci. Technol. B., 11, 10 (1993).Google Scholar
5. Bessolov, V.N., Ivankov, A.F., Konenkova, E.V., and Lebedev, M.V., Pis’ma Zh. Tekh. Fiz., 21(1), 46–50 (1995) [Tech. Phys. Lett. 21, 20 (1995) ].Google Scholar
6. Berkowitz, M., Ghosh, S.K., and Parr, R.G., J. Am. Chem. Soc, 107, 6811 (1985).Google Scholar
7. Moelwyn-Hughes, E.A., The chemical statics and kinetics of solutions. ( Academic Press, London and New York, 1971).Google Scholar