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Substrate Misorientation Effects on Epitaxial GaInAsSb

Published online by Cambridge University Press:  10 February 2011

C. A. Wang ,
H. K. Choi ,
D. C. Oakley  and
G. W. Charache
C. A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
D. C. Oakley
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
G. W. Charache
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
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Abstract

The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6° toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6° toward (111)B misorientation, while a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6° toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 60 toward (111)B misorientation compared to 2° toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 37
Copyright
Copyright © Materials Research Society 1998

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