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Substrate Effects on the Kinetics of Solid Phase Crystallization In a-Si

Published online by Cambridge University Press:  15 February 2011

L. Haji ,
P. Joubert ,
M. Guendouz ,
N. Duhamel  and
B. Loisel
L. Haji
Affiliation:
Laboratoire Composants et Systèmes de Visualisation, Université de Rennes I, I.U.T. de Lannion, 22302 Lannion Cedex, France
P. Joubert
Affiliation:
Laboratoire Composants et Systèmes de Visualisation, Université de Rennes I, I.U.T. de Lannion, 22302 Lannion Cedex, France
M. Guendouz
Affiliation:
Centre National d'Etudes des TéléCommunications, LAB/OCM, 22301 Lannion Cedex, France
N. Duhamel
Affiliation:
Centre National d'Etudes des TéléCommunications, LAB/OCM, 22301 Lannion Cedex, France
B. Loisel
Affiliation:
Centre National d'Etudes des TéléCommunications, LAB/OCM, 22301 Lannion Cedex, France
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Abstract

The effect of substrate nature on the solid phase crystallization at 600 °C of a-Si deposited by low pressure chemical vapor deposition is investigated by x-ray diffraction and transmission electron microscopy. The nucleation rate varies slightly resulting to a weak variation in the final grain sizes as a function of the substrate type. In all cases the grain growth mode is found to be three dimensional. In contrary, a drastic effect of the substrate is observed for films deposited by plasma enhanced CVD. Fast crystallization is obtained on indium tin oxide (ITO) resulting to small grain poly-Si, whereas the crystallization is retarded on glass leading to an increase in the grain size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 177
Copyright
Copyright © Materials Research Society 1992

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References

1. Wu, I.W., Lewis, A. G., Huang, T. Y. and Chiang, A., 1990 SID International Symposium Digest of Technical Papers, (The Society for Information Display, Playa del Rey, C.A, 1990), pp 307–310.Google Scholar
2. Joubert, P., Loisel, B., Chouan, Y. and IIaji, L., J. Electrochem. Soc. 134, 2541 (1987).Google Scholar
3. Hatalis, M. K. and Greve, D., J. Appl. Phys. 63, 2260 (1988).Google Scholar
4. Christian, J. W., Physical Metallurgy, edited by Cahn, R. W. (North-Holland, Amsterdam, 1970), Chap. 10.Google Scholar
5. Iverson, R. B. and Reif, R., J. Appl. Phys. 62, 1675 (1987).Google Scholar