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Substrate Effects on the Growth of InN

Published online by Cambridge University Press:  10 February 2011

S. M. Donovan
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611
J. D. MacKenzie
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611
C. R. Abernathy
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611
S. J. Pearton
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611
P. Holloway
Affiliation:
University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611
F. Ren
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
J. M. Zavada
Affiliation:
U. S. Army Research Office, Raleigh, NC
B. Chai
Affiliation:
University of Central Florida, Orlando, FL
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Abstract

Auger electron spectroscopy was used to examine the nitridation behavior of GaAs, sapphire and lithium aluminate (LAO) substrates exposed to an RF nitrogen plasma. No evidence of nitridation was found for the sapphire and LAO substrates. GaAs substrates did show evidence of nitridation which led to smooth InN surface morphology without the need for a low temperature buffer. Comparable InN films were obtained on sapphire and LAO substrates when a low temperature AlN buffer was used. Hall measurements indicate background carrier concentrations are relatively insensitive to substrate type, though mobilities decreased as surface morphology was improved.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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