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Submicron Conductor Array Fabricated from a Recrystallized Eutectic Thin Film

Published online by Cambridge University Press:  15 February 2011

H. E. Cline*
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301
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Abstract

A submicron conductor array was fabricated without using lithography by selectively etching a recrystallized A1-A12Cu eutectic alloy thin film. The 2 micron thick eutectic films were deposited on glass substrates and directionally solidified with both a quartz-iodine lamp and a scanning laser at rates between .0016 and .14 cm/sec. The resulting structure consisted of alternate parallel stripes of the two eutectic phases with a spacing between .5 and 4 microns that was controlled by the solidification rate. An array of submicron Al- rich conductors was fabricated by selectively etching away the Al2 Cu phase. At solidification rates greater than .004 cm/sec using the lamp heater the solid-liquid interface became non-planar while with the laser the structure was well alligned at the highest rates used, .14 cm/sec. At the maximum theoretical solidification rate that produces a two phase aligned eutectic structure the width of the Al wires would be 100A.

Type
Research Article
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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