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Sub 0.1 μm Asymmetric Γ-gate PHEMT Process Using Electron Beam Lithography

Published online by Cambridge University Press:  01 February 2011

W. S. Sul ,
D. H. Shin  and
J. K. Rhee
W. S. Sul
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University, Seoul, Korea Tel: +82-2-2260-3335, Fax: +82-2-2277-4796, E-mail: [email protected]
D. H. Shin
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University, Seoul, Korea Tel: +82-2-2260-3335, Fax: +82-2-2277-4796, E-mail: [email protected]
J. K. Rhee
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT) Dongguk University, Seoul, Korea Tel: +82-2-2260-3335, Fax: +82-2-2277-4796, E-mail: [email protected]
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Abstract

In this paper, we have studied on the fabrication of GaAs-based pseudomorphic high electron mobility transistors (PHEMT's) for the purpose of millimeter-wave applications. To fabricate the high performance GaAs-based PHEMT's, we have developed unit processes, such as 0.1 μm Γ-gate lithography, silicon nitride passivation, and air-bridge process to achieve high performance of device characteristics. The DC characteristics of the fabricated PHEMT was measured at a unit gate width of 70 μm and 2 gate fingers, and showed a good pinch-off property (VP = -1 V) and a drain-source saturation current density (Idss) of 373.53 mA/mm. Maximum extrinsic transconductance (gm) was 522.4 mS/mm at Vgs = -0.3 V, Vds = 1.5 V, and Ids = 0.5 Idss. The RF measurements were performed in the frequency range of 1.0 ∼ 50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.3 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 4.2 dB of S21 gain were obtained, respectively. A current gain cut-off frequency (fT) of 113 GHz and a maximum frequency of oscillation (fmax) of 180 GHz were achieved from the fabricated PHEMT with a 0.1 μm gate length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 720: Symposium H – Materials Issues for Tunable RF and Microwave Devices III , 2002 , H3.11
Copyright
Copyright © Materials Research Society 2002

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