Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:50:00.378Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study on the Mechanism for the Influence of High Density of Defect Movement on the Leakage Current of PN Junction

Published online by Cambridge University Press:  16 February 2011

Zhang Tonghe ,
Zhou Shenghui ,
Wu Yuguang  and
Luo Yan
Zhang Tonghe
Affiliation:
Institute of low Energy Nuclear Physics, Beijing Normal University Beijing China. Ion Beam Laboratory, Shanghai Institute of Metallurgy, Shanghai, China.
Zhou Shenghui
Affiliation:
Institute of low Energy Nuclear Physics, Beijing Normal University Beijing China. Ion Beam Laboratory, Shanghai Institute of Metallurgy, Shanghai, China.
Wu Yuguang
Affiliation:
Institute of low Energy Nuclear Physics, Beijing Normal University Beijing China. Ion Beam Laboratory, Shanghai Institute of Metallurgy, Shanghai, China.
Luo Yan
Affiliation:
Institute of low Energy Nuclear Physics, Beijing Normal University Beijing China. Ion Beam Laboratory, Shanghai Institute of Metallurgy, Shanghai, China.
Get access

Abstract

The results in the paper show that high defect density appears during rapid thermal annealing. The spreading of the defect distribution increases with increasing of the annealing time. So the leakage current increases up. It is found that the PN junction leakage current for short annealing time(5s) and for hot implantation are obviously lower than that of RT implantation. The mechanism of the leakage current reduction is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 115
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Pennycook, S.J., Narayan, J., Hollond, O.W., J.Electrochem. Soc., 132, 1962(1985).10.1149/1.2114262Google Scholar
(2) Fair, R.B. et, J.Electrochem. Soc., 131, 2387(1984).10.1149/1.2115263Google Scholar
(3) Tonghe, Zhang, Yuguang, Wu, Beijing, J. Normal University(Natural Science) 3, 41(1987).Google Scholar
(4) Tonghe, Zhang, Guohui, Li, Yuguang, Wu, Nuclear Techniques,11(10), 44(1988).Google Scholar
(5) Tonghe, Zhang, Yuguang, Wu, Yan, Luo and Guohui, Li, Microelectronics and computer, 4(10), 5(1987).Google Scholar
(6) Tonghe, Zhang, Yuguang, Wu and Yan, Luo, ACTA Electronica Sinica 15(4), 105(1987).Google Scholar
(7) Tonghe, Zhang, Shenghui, Zhou, Yuguang, Wu and Yan, Luo, Proceeding of international IC conference ICSICT-89, to be published.Google Scholar