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A Study on the Growth of a Ferroelectric Thin Film Using Ionized Cluster Beam Epitaxy Technique and the Application for Ulsi Fabrication

Published online by Cambridge University Press:  10 February 2011

Hyun Seok Lee  and
Man Young Sung
Hyun Seok Lee
Affiliation:
Dept. of Electrical Eng., KOREA University 1, Anam-dong, Sungbuk-ku, Seoul, 136-701, Korea, [email protected]
Man Young Sung
Affiliation:
Dept. of Electrical Eng., KOREA University 1, Anam-dong, Sungbuk-ku, Seoul, 136-701, Korea, [email protected]
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Abstract

The dielectric properties of Ba0.65Sr0.35TiO3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1, um have been successfully grown on a Si (100) substrate at 400°C using the electron beam assisted ICBE system with a plasma O2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500Å deposited at a substrate temperature of 400°C has a dielectric constant of 1191 and a leakage current of about 2.37×10-9 A/cm2. This shows the BST film can be applied to dielectrics of ULSI capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 63
Copyright
Copyright © Materials Research Society 1997

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