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A Study on Hysteresis Effect of Barium Strontium Titanate Thin Films for Alternative Gate Dielectric Application
Published online by Cambridge University Press: 10 February 2011
Abstract
Hysteresis effect of barium strontium titanate (BST) thin films for gate dielectric application has been studied. It is found that the “counterclockwise” hysteresis has strong sweep voltage and operating temperature dependence. It can be reduced or eliminated by proper thermal annealing or by using a barrier layer. A charge trapping and detrapping mechanism has been proposed.
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- Copyright © Materials Research Society 2000