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A Study on Hermetic Glass Sealing Using a Modified Direct Bonding Method

Published online by Cambridge University Press:  15 February 2011

B. K. Ju ,
C. G. Ko ,
Y. H. Lee ,
I. B. Kang ,
P. White ,
N. Samaan ,
M. Haskard  and
M. H. Oh
B. K. Ju
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, [email protected]
C. G. Ko
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, [email protected]
Y. H. Lee
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, [email protected]
I. B. Kang
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, [email protected]
P. White
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, [email protected]
N. Samaan
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, [email protected]
M. Haskard
Affiliation:
Microelectronics Centre, University of South Australia, Warrendi Rd. The Levels, SA5095, Australia, [email protected]
M. H. Oh
Affiliation:
Div.Electronics and Information Technology, KIST, P.O.Box 131, CheongRyang, Seoul 130–650, Korea, [email protected]
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Abstract

This paper presents the process and experimental results about the improved initial bonding between #7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm2) through 250 °C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 123
Copyright
Copyright © Materials Research Society 1997

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References

1. Fung, C.D. et al., Micromachining and Micropackaging of Transducers, Elsevier Science Publishing Company Inc., 1985, pp.41.Google Scholar
2. Ju, B.K., Study on the Direct Bonding of Silicon Wafers for Microelectromechemical System, Ph.D. Thesis of Korea University, 1995, pp.8–19.Google Scholar
3. Mazara, W.P. et al., “Bonding of silicon wafers for silicon-on-insulator,” J.Appl.Phys., vol.64, no. 10, pp.4943–4950, 1988.11.Google Scholar
4. Tong, Q.Y. et al., “Water-enhanced debonding of room-temperature bonded silicon wafers for surface protection applications,” Jpn.J.Appl.Phys., vol.31, part 1, no. 11, pp.3483–3488, 1992.11.Google Scholar
5. Corning Material Information, MI-7740–88Google Scholar
6. Jiao, J. et al., “Low temperature SDB and interface behaviors,” Proc. IEEE MEMS, 95, pp.394–397, 1995.2.Google Scholar
7. Kissinger, G. et al., “Void-free silicon-wafer-bond strengthening in the 200–400'C range,” Sensors and Actuators, vol.A36, pp. 149–156, 1993.Google Scholar
8. Tong, Q.Y. et al., “Low temperature wafer direct bonding,” J.Microelectromechanical Systems, vol.3, no.1, p.29–35, 1994.3.Google Scholar