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Study on Dipole Layer Formation between Two Oxides : Experimental Evidences and Possible Models

Published online by Cambridge University Press:  21 November 2011

Koji Kita  and
Akira Toriumi
Koji Kita
Affiliation:
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Akira Toriumi
Affiliation:
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Abstract

Hetero-interface between two oxides sometimes forms a dipole layer which is experimentally observable macroscopically, as an electric potential barrier at the interface. Investigation of the flatband voltage shift of the metal-insulator-semiconductor capacitors with bilayer oxides as the insulator is suitable to characterize the dipole formation at the interface of two oxides. A model to explain the driving force to form the dipole is discussed by taking account of the areal density difference of oxygen atoms at the interface, which should be a guideline to predict both the direction and magnitude of the interface dipoles. Based on this model the requirement for the oxides to form the dipoles is also discussed.

Keywords

devicesdielectricoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1331: Symposium K – Frontiers of Solid-State Ionics , 2011 , mrss11-1331-k04-01
Copyright
Copyright © Materials Research Society 2011

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