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Study of Vacancy and Impurity Complexes in Si Solid-Phase Epitaxial Crystallization with Positron Annihilation Spectroscopy

Published online by Cambridge University Press:  17 March 2011

Claudine M. Chen ,
Stefano Rassiga ,
Marc H. Weber ,
Mihail P. Petkov ,
Kelvin G. Lynn  and
Harry A. Atwater
Claudine M. Chen
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
Stefano Rassiga
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
Marc H. Weber
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
Mihail P. Petkov
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
Kelvin G. Lynn
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We investigate the residual vacancy defect species after crystallization of amorphous Si (a-Si) by solid phase epitaxy (SPE). To this end, we correlate the total and electronically-active doping concentrations measured by secondary mass spectrometry and spreading resistance analysis, and data from positron annihilation spectroscopy (PAS), which is sensitive to openvolume defects. Float-zone silicon substrates were implanted with boron, phosphorus and both phosphorus and boron ions to create nonuniform doping profiles at degenerate doping levels, after an amorphization step by 29Si+ ions. Samples were vacuum annealed at 600°C to induce SPE, and the SPE rate was measured by time-resolved reflectivity. PAS was used for identification of the impurity-defect complexes. Momentum-resolved PAS measurements enable the detection of phosphorus-vacancy (P-V) and oxygen-vacancy (O-V) complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B10.1
Copyright
Copyright © Materials Research Society 2000

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