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A Study of Tungsten-Titanium Barriers in Silver Metallization

Published online by Cambridge University Press:  01 February 2011

Shekhar Bhagat ,
N. D. Theodore  and
T. L. Alford
Shekhar Bhagat
Affiliation:
[email protected], Arizona State University, School of Materials, 1115 E Lemon Street,, #202, Tempe, AZ, 85281, United States, 4806486921
N. D. Theodore
Affiliation:
[email protected], Freescale Semiconductor Inc., Tempe, AZ, 85284, United States
T. L. Alford
Affiliation:
[email protected], Arizona State University, School of Materials, Tempe, AZ, 85281, United States
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Abstract

This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C. Silicon started moving into the tungsten-titanium film at temperatures above 600 °C. Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.

Keywords

barrier layerWTi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B08-10
Copyright
Copyright © Materials Research Society 2007

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References

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