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Study of Titanium and Nickel Silicide Formation By Q-Switched Laser and Multiscanning E-Beam*

Published online by Cambridge University Press:  15 February 2011

G.G. Bentini ,
R. Nipoti ,
M. Berti ,
A.V. Drigo  and
C. Cohen
G.G. Bentini
Affiliation:
C.N.R. - ISTITUTO LAMEL, Via Castagnoli 1, 40126, Bologna, ITALY
R. Nipoti
Affiliation:
C.N.R. - ISTITUTO LAMEL, Via Castagnoli 1, 40126, Bologna, ITALY
M. Berti
Affiliation:
Istituto di Fisica, Unità GNSM, Via Marzolo 8, 35100 Padova, ITALY
A.V. Drigo
Affiliation:
Istituto di Fisica, Unità GNSM, Via Marzolo 8, 35100 Padova, ITALY
C. Cohen
Affiliation:
Groupe de Physique des Solides de l'E.N.S., Tour 23, 2 Place Jussieu, 75221 Paris, FRANCE
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Abstract

The use of Q-switched ruby laser and multiscanning electron beam annealing (MEBA) to produce the reaction of thin Ti and Ni films deposited onto single crystal Si has been studied. Laser annealing produces a reaction at the interface between the metal and the semiconductor; the reacted layers are not uniform in composition and more similar to a mixture than to a well-defined phase. The silicide layers produced by MEBA results from the solid state reaction of whole metal layer and have well-defined compositions and sharp interfaces between phases and the underlying crystal. The observed thicknesses of the silicides produced by MEBA cannot be accounted for by the parabolic volume diffusion mechanism operating in the standard furnace annealing. Post annealing treatments in furnace showed that e-beam produced silicides have the same thermal stability as those produced by conventional heat treatments. The presence of a critical temperature for silicide formation in Ti/Si MEBA annealed samples has been confirmed and studied in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 443
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Work supported by CNR (Italy) under the international cooperation grants n°98791 and n°80.02388.02 and by CNRS (France) under R.C.P. n°157.

References

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