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Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, Ptga and PtGa2 on Gallium Arsenide

Published online by Cambridge University Press:  25 February 2011

Young K. Kim ,
David K. Shuh ,
R. Stanley Williams ,
Larry P. Sadwick  and
Kang L. Wang
Young K. Kim
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, California 90024-1569
David K. Shuh
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, California 90024-1569
R. Stanley Williams
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, California 90024-1569
Larry P. Sadwick
Affiliation:
Department of Electrical Engineering Device Research Laboratory, University of California, Los Angeles, California 90024
Kang L. Wang
Affiliation:
Department of Electrical Engineering Device Research Laboratory, University of California, Los Angeles, California 90024
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Abstract

Epitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 15
Copyright
Copyright © Materials Research Society 1989

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References

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