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Study of The Transversal Electron Mobility in Heterojunction Bipolar Transistors with Strained SI1−x Gex-Base

Published online by Cambridge University Press:  25 February 2011

J. Poortmans ,
M. Caymax ,
A. Van Ammel ,
M. Libezny  and
J. Nijs
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Van Ammel
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Libezny
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Nijs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The effective transversal mobility of the minority carrier electrons in asymmetrically strained p-type Si1−x Gex -layers, grown on a Si (100) substrate, is studied as a function of boron doping concentration and Ge-content x. The experiments are based on the temperature dependence (290 to 400K) of the collector current enhancement of heterojunction bipolar transistors with a pseudomorphic Si1−x Gex-base. The interpretation of these results is based on new insights about the effective density of states in the valence band of these strained layers [1]. We will present first experimental evidence of the theoretical calculations in [1]. From this we will derive then the value of the NcNv -product for the strained Si1−x Gex-alloy. This allows to extract the ratio of the electron mobility in Si and strained Si1−xGex. We found an enhancement of the mobility when the B-doping level is around 1018 cm−3 and 0.08<x<0.16. At higher values of the Ge-content and the doping level, the enhancement is reduced again.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 409
Copyright
Copyright © Materials Research Society 1993

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References

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