Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:35:41.721Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of the Planarity by Sti Cmp Erosion Modeling

Published online by Cambridge University Press:  10 February 2011

K.H. Kim ,
S.R. Hah ,
J.H. Han ,
C.K. Hong ,
U.I. Chung  and
G.W. Kang
K.H. Kim
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
S.R. Hah
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
J.H. Han
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
C.K. Hong
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
U.I. Chung
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
G.W. Kang
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
Get access

Abstract

In this work, we propose a new equation that predicts the planarity as a function of active pattern density, initial step height, selectivity between gapfilled oxide and silicon nitride and over CMP amounts. In order to achieve highly planarized STI surface, uniform active density, reduced initial step height, minimization of over CMP amounts and high selective slurry were required. Our new equation was applied to the 0.18um graded CPU devices’ STI CMP to enhance planarity and these parameters were evaluated quantitatively. It is concluded that the model suggested is useful in predicting CMP planarity

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fazan, P.C. and Mathews, V.K., JEDM Tech. Dig., 1993, pp.5 7–60 Google Scholar
2. Ouma, D., Oji, C., Boning, D. and Chung, J., in Proc. CMP-MIC Conf., pp.20–27, Santa Clara, CA, Feb 1998 Google Scholar
3. Boning, D., CMP Tech. For ULSI Interconnection, pp.F1–20, San Francisco, CA, Jul. 1998 Google Scholar
4. Yoon, B.U., Internal Report, 1998 Google Scholar
5. Askeland, D.R., The Science and Engineering of Materials, PWS Engineering, Boston, MA, pp.373–387 Google Scholar