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A Study of the Planarity by Sti Cmp Erosion Modeling

Published online by Cambridge University Press:  10 February 2011

K.H. Kim ,
S.R. Hah ,
J.H. Han ,
C.K. Hong ,
U.I. Chung  and
G.W. Kang
K.H. Kim
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
S.R. Hah
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
J.H. Han
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
C.K. Hong
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
U.I. Chung
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
G.W. Kang
Affiliation:
U-Tech. Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd, San24 Nongseo-Ri Kiheung-Eup Yongin-CityKorea, 449–900, Korea, [email protected]
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Abstract

In this work, we propose a new equation that predicts the planarity as a function of active pattern density, initial step height, selectivity between gapfilled oxide and silicon nitride and over CMP amounts. In order to achieve highly planarized STI surface, uniform active density, reduced initial step height, minimization of over CMP amounts and high selective slurry were required. Our new equation was applied to the 0.18um graded CPU devices’ STI CMP to enhance planarity and these parameters were evaluated quantitatively. It is concluded that the model suggested is useful in predicting CMP planarity

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

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References

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