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A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

Published online by Cambridge University Press:  10 February 2011

Daisuke Takeuchi ,
Hideyuki Watanabe ,
Sadanori Yamanaka ,
Hideyo Okushi ,
Koji Kajimura ,
Hidetaka Sawada ,
Hideki Ichinose  and
Takashi Sekiguchi
Daisuke Takeuchi
Affiliation:
Electrotechnical Laboratory,#0501 1–1–4 Umezono, Tsukuba 305–8568 Ibaragi, Japan
Hideyuki Watanabe
Affiliation:
Electrotechnical Laboratory,#0501 1–1–4 Umezono, Tsukuba 305–8568 Ibaragi, Japan
Sadanori Yamanaka
Affiliation:
Electrotechnical Laboratory,#0501 1–1–4 Umezono, Tsukuba 305–8568 Ibaragi, Japan
Hideyo Okushi
Affiliation:
Electrotechnical Laboratory,#0501 1–1–4 Umezono, Tsukuba 305–8568 Ibaragi, Japan
Koji Kajimura
Affiliation:
Electrotechnical Laboratory,#0501 1–1–4 Umezono, Tsukuba 305–8568 Ibaragi, Japan
Hidetaka Sawada
Affiliation:
Department of Material Science, The University of Tokyo 7–3–1 Hongo, Bunkyo-ku 113–8656 Tokyo, Japan
Hideki Ichinose
Affiliation:
Department of Material Science, The University of Tokyo 7–3–1 Hongo, Bunkyo-ku 113–8656 Tokyo, Japan
Takashi Sekiguchi
Affiliation:
Institute of Material Science in Tohoku University 2–1–1 Katahira, Sendai 980–8577, Miyagi, Japan
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Abstract

The band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 87
Copyright
Copyright © Materials Research Society 2000

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