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Study of the Inhomogeneities in Semiinsulating GaAs and InP by Spatially Resolved Photoconductivity

Published online by Cambridge University Press:  22 February 2011

M. A. Gonzalez ,
J. Jiménez ,
P. Martin ,
L. F. Sanz ,
M. Chafai  and
M. Avella
M. A. Gonzalez
Affiliation:
Dto de Fisica de la Materia Condensada ETSII and Facultad de Ciencias 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Dto de Fisica de la Materia Condensada ETSII and Facultad de Ciencias 47011 Valladolid, Spain
P. Martin
Affiliation:
Dto de Fisica de la Materia Condensada ETSII and Facultad de Ciencias 47011 Valladolid, Spain
L. F. Sanz
Affiliation:
Dto de Fisica de la Materia Condensada ETSII and Facultad de Ciencias 47011 Valladolid, Spain
M. Chafai
Affiliation:
Dto de Fisica de la Materia Condensada ETSII and Facultad de Ciencias 47011 Valladolid, Spain
M. Avella
Affiliation:
Dto de Fisica de la Materia Condensada ETSII and Facultad de Ciencias 47011 Valladolid, Spain
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Abstract

A high resolution spatially resolved photocurrent system to study bulk non homogeneities in semiinsulating GaAs and InP is described. [Fe+3] distribution is studied in InP. In undoped LEC semiinsulating GaAs a study of the relation of Photoquenching (PQ) and Enhanced Photocurrent (EPC) to the dislocation atmosphere is done.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 241
Copyright
Copyright © Materials Research Society 1992

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References

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