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A Study of the In Situ Epitaxial Growth of the 123 Ybco Films from a Stoichiometric Target by Rf Magnetron Sputtering

Published online by Cambridge University Press:  28 February 2011

R. L. Meng ,
Y. Q. Wang ,
Y. Y. Sun ,
Li Gao ,
P. H. Hor  and
C. W. Chu
R. L. Meng
Affiliation:
Texas Center for Superconductivity University of Houston Houston, Texas 77204‐5506
Y. Q. Wang
Affiliation:
Texas Center for Superconductivity University of Houston Houston, Texas 77204‐5506
Y. Y. Sun
Affiliation:
Texas Center for Superconductivity University of Houston Houston, Texas 77204‐5506
Li Gao
Affiliation:
Texas Center for Superconductivity University of Houston Houston, Texas 77204‐5506
P. H. Hor
Affiliation:
Texas Center for Superconductivity University of Houston Houston, Texas 77204‐5506
C. W. Chu
Affiliation:
Texas Center for Superconductivity University of Houston Houston, Texas 77204‐5506
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Abstract

The synthesis parameters have been systematically examined for the in situ growth of high temperature superconducting Y‐Ba‐Cu‐0 thin films from a stoichiometric target by rf magnetron sputtering. By properly adjusting the deposition temperature, the total sputtering (O2+Ar)‐pressure and the O2‐partial pressure, we have reproducibly obtained 123 YBCO films with a zero resistivity temperature Tcz = 84 K and a transition width of 3 K°. The films so obtained have excellent surface morphology and a surface roughness better than ∼ 5 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 627
Copyright
Copyright © Materials Research Society 1990

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References

1 Chaudhari, P., Koch, R. H., Laibowitz, R. B., McGuire, T. R. and Gambino, R. J., Phys. Rev. Lett. 51 2684 (1987).Google Scholar
2 Wu, M. K., Ashburn, J. R., Torng, C. J., Hor, P. H., Meng, R. L., Gao, L., Haung, Z. J., Wang, Y. Q. and Chu, C. W., Phys. Rev. Leu. 51 908 (1987).Google Scholar
3 Li, H. C., Linker, G., Ratzel, F., Smithey, R. and Geerk, J., Appl. Phys. Lett. 51 1098 (1988).Google Scholar
4 Kawasaki, M., Nagata, S., Sato, Y., Funabashi, M., Hasegawa, T., Kishino, K., Kitazawa, K., Fueki, K. and Koinuma, H., Jpn. J. Appl. Phys. 26 1738 (1987).Google Scholar
5 Silver, R. M., Bergin, A. B., Wendman, M. and Lozanne, A. L. de, Appl. Phys. Lett. 52 2174 (1988).Google Scholar
6 Lathrop, D. K., Russek, S. E. and Bahrman, R. A., Appl. Phys. Lett. 51 1554 (1987).Google Scholar