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Study of the Electrical Resistivity Change upon Phase Transformation in Zr-Based Metallic Glass

Published online by Cambridge University Press:  17 March 2011

Keiko Komatsu ,
Ryuji Tamura ,
Shin Takeuchi  and
Tadaharu Shibuya
Keiko Komatsu
Affiliation:
Dept of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
Ryuji Tamura
Affiliation:
Dept of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
Shin Takeuchi
Affiliation:
Dept of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
Tadaharu Shibuya
Affiliation:
Faculty of Engineering, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Abstract

In order to gain insight into the influences of formation of an icosahedral phase in Zr-based metallic glasses on the physical properties, thermal and electrical properties of Zr70Ni10Pd20 metallic glass were investigated. From DSC analyses, activation energies for the phase transition from an amorphous to an icosahedral phase and from the icosahedral to a crystalline (Zr2Ni) phase were estimated to be 3.42 and 3.07 eV, respectively. The effect of the phase transformations on the electrical resistivity was successfully observed; the resistivity clearly exhibits an increase and a decrease corresponding to the transitions from the amorphous to the icosahedral phase and from the icosahedral to the crystalline Zr2Ni phase, respectively. It is concluded that the increase of the resistivity upon the precipitation of the icosahedral phase is due to an increase of the volume fraction of the icosahedral grains, which possess higher resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 644: Symposium L – Supercooled Liquid, Bulk Glassy and Nanocrystalline State of Alloys , 2000 , L1.4
Copyright
Copyright © Materials Research Society 2001

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References

1. Köster, U., Miehhadt, J., Roos, S. and Liebertz, H., Appl. Phys. Lett., 69, 179 (1996)Google Scholar
2. Saida, J., Matsushita, M., Li, C. and Inoue, A., Appl. Phys. Lett., 76, 3558 (2000)Google Scholar
3. Kissinger, H. E., Anal. Chem., 29, 1702 (1957)Google Scholar
4. Matsushita, H., Saida, J., Zhang, T., Inoue, A., Chen, M. W. and Sakurai, T., Philos. Mag. Lett., 80, 79 (2000)Google Scholar
5. Mizutani, U., Phys. Stat. Sol. (b), 9, 176 (1993)Google Scholar
6. Mizutani, U., Kamiya, A., Matsuda, T. and Takeuchi, S., Mater. Sci. Eng., A133, 111 (1991)Google Scholar
7. Mizutani, U., Yamada, Y., Takeuchi, T., Hashimoto, K., Belin, E., Sadoc, A., Yamauchi, T. and Matsuda, T., J. Phys.: Condens. Matter, 6, 7335 (1994)Google Scholar
8. Chen, M. W., Inoue, A., Zhang, T., Sakai, A. and Sakurai, T., Philos. Mag. Lett., 80, 263 (2000)Google Scholar