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A Study of Subsurface Damage Generation by Single Scratches of Silicon

Published online by Cambridge University Press:  28 February 2011

J.H. Ahn  and
S. Danyluk
J.H. Ahn
Affiliation:
University of Illinois at Chicago, Civil Engineering, Mechanics, and Metallurgy Department, P.O. Box 4348, mail code 246, Chicago, IL 60680
S. Danyluk
Affiliation:
University of Illinois at Chicago, Civil Engineering, Mechanics, and Metallurgy Department, P.O. Box 4348, mail code 246, Chicago, IL 60680
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Abstract

This paper describes the use of electrical resistivity to quantify the damage produced asa result of the scratching of single crystal silicon.

The change in resistivity was measured as a function of time as a scratching diamond passed between four electrical contacts of a specially designed printed circuit and while thesilicon was heated to temperatures up to 300ºC. The data shows that the resistivity increases during scratching and reaches a steady state value if the silicon temperatureis below 200ºC. The conductivity recovers when the silicon temperature is 200ºC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 140: Symposium S – New Materials Approaches to Tribology: Theory and Applications , 1988 , 319
Copyright
Copyright © Materials Research Society 1989

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References

[1] Runyan, W. R., Semiconductor Measurements and Instrumentation (Texas Instruments Electronic series, McGraw-Hill Book Company, 1975), p.49.Google Scholar
[2] Schaffer, S., Phys. Status Solidica, 19, 297 (1967).Google Scholar
[3] Imai, M. and Sumino, K., Phil. Mag. A47, 599 (1983).Google Scholar
[4] Cockayne, D. J. H. and Hons, A., J. de Physique C6, 11 (1978).Google Scholar
[5] Danyluk, S., Lee, S. W., and Ahn, J., J. Appl. Phys. 63(9). 4568 (1988).Google Scholar