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Study of Strain Relaxation in Epitaxial Structure Ge0.2 Si0.8/Si At Thermo-Implantation Treatment by Ion Beam Channeling

Published online by Cambridge University Press:  10 February 2011

A. F. Vyatkin ,
V. K. Egorov  and
E. V. Egorov
A. F. Vyatkin
Affiliation:
IPMT RAS, 142432, Moscow District, Russia; [email protected]
V. K. Egorov
Affiliation:
IPMT RAS, 142432, Moscow District, Russia; [email protected]
E. V. Egorov
Affiliation:
Moscow Engineering Phys. Institute, Moscow, Russia; ISSP RAS, Chernogolovka
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Abstract

Strain relaxation in epitaxial Si-Ge structures induced by ion beam bombardment has been studied using a He+ channeling technique. It is shown that hot ion beam bombardment (230°C, Si+ ions with energy 200 keV and fluence 6·1013 ion/cm2) of thin strained Si-Ge layers results in partial strain relaxation. A model of the strain relaxation induced by radiation damage is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 183
Copyright
Copyright © Materials Research Society 2000

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