Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:32:53.386Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of sputtered Hafnium oxide Films for Sensor Applications

Published online by Cambridge University Press:  01 February 2011

H. Grüger ,
C. Kunath ,
E. Kurth ,
S. Sorge  and
W. Pufe
H. Grüger
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
C. Kunath
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
E. Kurth
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
S. Sorge
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
W. Pufe
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
Get access

Abstract

In this paper results of the deposition and annealing of hafnium oxide thin films are reported. Due to the sensor application in mind, thicknesses between 30 and 150 nm have been deposited by r.f. sputtering of a high purity oxide target. Annealing has an important influence on the layer structure, stress and application correlated properties. A detailed understanding of the layer preparation is necessary to adjust deposition and annealing. After deposition the layers are predominately amorphous, annealing leads to textured layers with monocline or orthorhombic phases.

Besides gas sensor applications optimized layers may serve as protective coating or combined with a second material to multi layer stacks as high reflective dielectric mirror.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 869: Symposium D – Materials, Integration and Technology for Monolithic Instruments , 2005 , D2.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lebedinskii, Yu et al., “Silicide formation at HfO2/Si and ZrO2/Si interface induced by Ar+ ion bombardment” Mat. Res. Soc. Symp. Proc. 768 (2004) E3.25, 165 Google Scholar
2. Duenas, S. et al., “On the interface quality of MIS structures fabricated from Atomic Layer Depostion of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films” Mat. Res. Soc. Symp. Proc. 786 (2004) E3.18 1Google Scholar
3. Kukli, Kaupo et al. “Effect of selected atomic layer deposition parameters on the structure and properties of hafnium oxide films“J. Appl. Phys. 96 (2004) 5298 Google Scholar
4. Balasubramanian, M. et al. “Wet etching characteristics and surface morphology of MOCVD grown HfO2 films“Thin Solid Films 462–463 (2004) 101 Google Scholar
5. Onishi, K., Kang, C., Choi, R., Cho, H.-J., Kim, Y., Krishnan, S., Lee, J. C. “Performance of polysilicon gate HfO2 MOSFETs on (100) and (111) Silicon substrates” IEEE Electron Device Letter 24 (2003) 254 Google Scholar
6. Grüger, H., Kunath, C., Kurth, E., Pufe, W., Sorge, S. “Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications” Proceedings of the Materials Research Society Fall Meeting 2003 Google Scholar
7. Grüger, H., Kunath, C., Kurth, E., Sorge, S., Pechstein, T. “High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing”, Solid Films 447–448 (2004) 509–515Google Scholar
8. Manory, R., Mor, T., Shimizu, I., Miyake, S., Kimmel, G. “Growth and structure control of HfO2-x films with cubic and tetragonal structures obtained by ion beam assisted deposition” J. Vac. Scie. Technol. A20 (2002) 549 Google Scholar