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Study Of Solution Processed Cu(In,Ga)S2 By Post-Deposition Treatments

Published online by Cambridge University Press:  07 July 2014

J.C. Armstrong ,
J.B. Cui  and
T.P. Chen
J.C. Armstrong
Affiliation:
Arkansas GREEN Research Center for Solar Cells and Department of Physics and Astronomy, University of Arkansas at Little Rock, AR 72204
J.B. Cui
Affiliation:
Department of Physics, University of Memphis, Memphis, TN 38152
T.P. Chen
Affiliation:
Arkansas GREEN Research Center for Solar Cells and Department of Physics and Astronomy, University of Arkansas at Little Rock, AR 72204
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Abstract

In this study, we have investigated various approaches to improve CIGS solar cells after thin film deposition. CIGS devices have been fabricated by a hydrazine solution based process. Post-deposition treatments by sulfurization were studied with focuses on the change of material structures and physical properties. Sulfurization has shown to increase grain size and band gap of the absorber layers at higher temperatures. This property change has shown a direct impact on open circuit voltage of the solar cell devices. Through these post-deposition processes, improved quality of CIGS materials can be obtained and the associated solar cell devices show better performance.

Keywords

solution depositionphotovoltaicthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1670: Symposium H – Advances in the Characterization, Performance and Defect Engineering of Earth Abundant and Thin Film Materials for Solar Energy Conversion , 2014 , mrss14-1670-h06-04
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Repins, I., Contreras, M.A., Egaas, B., DeHart, C., Scharf, J., Perkins, C.L., To, B., Noufi, R., “19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor,” Prog. Photovoltaics , 2008, 16, 235.10.1002/pip.822CrossRefGoogle Scholar
Kaelin, M., Rudmann, D., Tiwari, A. N., “Low Cost Processing of CIGS Thin Film Solar Cells,” Solar Energy , 77, 2004, 749–756.10.1016/j.solener.2004.08.015CrossRefGoogle Scholar
Guimard, D. et al. ., “Efficient Cu(In,Ga)Se2 Based Solar Cells Prepared by Electrodeposition,” Materials Research Bulletin , 763, 2003, B6.9.1-B.9.6.Google Scholar
Bhattacharya, R.N. et al. ., “15.4% CuIn1-xGaxSe2-Based Precursor Films,” Thin Solid Films , 361-362, 2000, 396–399.10.1016/S0040-6090(99)00809-3CrossRefGoogle Scholar
Kapur, V.K., Bansal, A., Le, P., Asensio, O.I., “Non-Vacuum Processing of CuIn1-xGaxSe2 Solar Cells on Rigid and Flexible Substrates Using Nanoparticle Precursor Inks,” Thin Solid Films , 431-432, 2003, 53–57.10.1016/S0040-6090(03)00253-0CrossRefGoogle Scholar
Liu, W., Mitzi, D.B., Yuan, M., Kellock, A.J., Chey, S.J., Gunawan, O., “12% efficiency CuIn(Se,S)2 photovoltaic device prepared using a hydrazine solution process,” Chemistry of Materials, 2010, 22, 1010–1014.10.1021/cm901950qCrossRefGoogle Scholar
Todorov, T.K., Gunawan, O., Gokmen, T., Mitzi, D.B., “Solution-processed Cu(In,Ga)(S,Se)2 absorber yielding a 15.2% efficient solar cell,” Prog. Photovoltaics , 2013, 21, 82–87.10.1002/pip.1253CrossRefGoogle Scholar
Mitzi, D.B., Yuan, M., Liu, W., Kellock, A.J., Chey, S.J., Deline, V., Schrott, A.G., “A high-efficiency solution deposited thin film photovoltaic device.” Adv. Mater. , 2008, 20, 3657–3662.10.1002/adma.200800555CrossRefGoogle Scholar
Mitzi, D.B., Yuan, M., Liu, W., Kellock, A., Chey, S.J., Schrott, A., Deline, V., “Solution processing of CIGS absorber layers using a hydrazine-based approach,” IEEE , 2008.Google Scholar
Mitzi, D.B., Yuan, M., Liu, W., Kellock, A.J., Chey, S.J., Gignac, L., Schrott, A.G., “Hydrazine-based deposition route for device quality CIGS films,” Thin Solid Films , 517, 2009, 2158–2162.10.1016/j.tsf.2008.10.079CrossRefGoogle Scholar